Toshiba Semiconductor and Storage TLP291(GB,SE
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TLP291(GB,SE Tech Specifications
| Category | Optoisolators - Transistor, Photovoltaic Output | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SOIC (0.179, 4.55mm Width) | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 80V | |
| Current Transfer Ratio-Min | 100% @ 5mA | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 3 μs | |
| Operating Temperature | -55°C~110°C | |
| Packaging | Tube | |
| Published | 2013 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Additional Feature | UL RECOGNIZED, VDE APPROVED | |
| Voltage - Isolation | 3750Vrms | |
| Output Type | Transistor |
| Configuration | SINGLE | |
| Number of Channels | 1Channel | |
| Power Dissipation | 200mW | |
| Voltage - Forward (Vf) (Typ) | 1.25V | |
| Input Type | DC | |
| Turn On Delay Time | 3 μs | |
| Forward Current | 50mA | |
| Max Output Voltage | 80V | |
| Output Current per Channel | 50mA | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Rise / Fall Time (Typ) | 2μs 3μs | |
| Current Transfer Ratio (Max) | 600% @ 5mA | |
| Turn On / Turn Off Time (Typ) | 3μs, 3μs | |
| Max Junction Temperature (Tj) | 125°C | |
| Dark Current-Max | 80nA | |
| Height | 2.2mm | |
| REACH SVHC | Unknown | |
| RoHS Status | RoHS Compliant |
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TLP291(GB,SE Documents
Download datasheets and manufacturer documentation for TLP291(GB,SE
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