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TLP383(D4BLLTL,E Tech Specifications

Category Optoisolators - Transistor, Photovoltaic Output
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Package / Case 6-SOIC (0.173, 4.40mm Width), 4 Leads
Mounting Type Surface Mount
Mount Surface Mount
Number of Elements 1 Element
Current Transfer Ratio-Min 200% @ 500μA
Usage Level Military grade
Published 2016
Packaging Tape & Reel (TR)
Operating Temperature -55°C~125°C
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL APPROVED, VDE APPROVED
Voltage - Isolation 5000Vrms
Output Type Transistor
Configuration SINGLE
Number of Channels 1Channel
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Max Output Voltage 80V
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 300mV
Rise / Fall Time (Typ) 2μs 3μs
Forward Current-Max 0.05A
Current Transfer Ratio (Max) 400% @ 500μA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Dark Current-Max 80nA
RoHS Status RoHS Compliant
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TLP383(D4BLLTL,E Documents

Download datasheets and manufacturer documentation for   TLP383(D4BLLTL,E

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