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TLP383(GR-TPL,E Tech Specifications

Category Optoisolators - Transistor, Photovoltaic Output
Manufacturer Toshiba
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SOIC (0.173, 4.40mm Width), 4 Leads
Current Transfer Ratio-Min 100% @ 5mA
Turn Off Delay Time 3 μs
Usage Level Military grade
Operating Temperature -55°C~125°C
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Isolation 5000Vrms
Output Type Transistor
Number of Channels 1Channel
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Turn On Delay Time 3 μs
Forward Current 10mA
Max Output Voltage 80V
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 80V
Rise / Fall Time (Typ) 2μs 3μs
Reverse Voltage 5V
Current Transfer Ratio (Max) 300% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Max Junction Temperature (Tj) 125°C
Vce Saturation (Max) 300mV
Height 2.3mm
RoHS Status RoHS Compliant
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TLP383(GR-TPL,E Documents

Download datasheets and manufacturer documentation for   TLP383(GR-TPL,E

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