Toshiba Semiconductor and Storage TLP630(GB,F)
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TLP630(GB,F) Tech Specifications
| Category | Optoisolators - Transistor, Photovoltaic Output | |
| Manufacturer | Toshiba | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Gold, Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | 6-DIP (0.300, 7.62mm) | |
| Number of Pins | 6Pins | |
| Collector-Emitter Saturation Voltage | 400mV | |
| Current Transfer Ratio-Min | 100% @ 5mA | |
| Operating Temperature | -55°C~100°C | |
| Packaging | Tube | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 250mW | |
| Voltage - Isolation | 5000Vrms |
| Output Type | Transistor with Base | |
| Number of Channels | 1Channel | |
| Power Dissipation | 250mW | |
| Voltage - Forward (Vf) (Typ) | 1.15V | |
| Input Type | AC, DC | |
| Forward Current | 60mA | |
| Max Output Voltage | 55V | |
| Output Current per Channel | 50mA | |
| Collector Emitter Voltage (VCEO) | 55V | |
| Max Collector Current | 50mA | |
| Rise / Fall Time (Typ) | 2μs 3μs | |
| Max Input Current | 60mA | |
| Current Transfer Ratio (Max) | 600% @ 5mA | |
| Turn On / Turn Off Time (Typ) | 3μs, 3μs | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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TLP630(GB,F) Documents
Download datasheets and manufacturer documentation for TLP630(GB,F)
- DatasheetsTLP630
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