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2N2222ADCSM-QR-EB Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer TT Electronics
Package / Case TO-18-3
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 500 mW
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
Collector-Emitter Saturation Voltage 1 V
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 300 MHz
Collector- Emitter Voltage VCEO Max 40 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 75 V
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