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2N4209C1A Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | TT Electronics | |
| Package / Case | LCC1-3 | |
| Emitter- Base Voltage VEBO | 4.5 V | |
| Pd - Power Dissipation | 360 mW | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 50 at - 10 mA, - 0.3 V |
| Collector-Emitter Saturation Voltage | 600 mV | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | SMD/SMT | |
| Collector- Emitter Voltage VCEO Max | 15 V | |
| Technology | Si | |
| Configuration | Single | |
| Collector Base Voltage (VCBO) | 15 V |
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