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2N4906 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer TT Electronics
Package / Case TO-3-2
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 87 W
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 25 at - 2.5 A, - 2 V
Collector-Emitter Saturation Voltage 1.5 V
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 4 MHz
Maximum DC Collector Current 5 A
Collector- Emitter Voltage VCEO Max 80 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 80 V
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