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2N6798 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer TT Electronics
Package / Case TO-39-3
Vds - Drain-Source Breakdown Voltage 200 V
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 25 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge -
Rds On - Drain-Source Resistance 400 mOhms
Id - Continuous Drain Current 5.5 A
Technology Si
Number of Channels 1 ChannelChannel
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