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BCY70 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer TT Electronics
Package / Case TO-18-3
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 350 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at - 10 mA, 1 V
Collector-Emitter Saturation Voltage 1.2 V
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 250 MHz
Collector- Emitter Voltage VCEO Max 40 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 50 V
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