TT Electronics BDS19-QR-B Single BJT Transistors
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BDS19-QR-B Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | TT Electronics | |
| Package / Case | TO220M-3 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 50 W | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 15 at - 4 A, - 2 V |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | 10 MHz | |
| Collector- Emitter Voltage VCEO Max | 150 V | |
| Technology | Si | |
| Configuration | Single | |
| Collector Base Voltage (VCBO) | 150 V |
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