VP1008CSM4 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer TT Electronics
Package / Case LCC-3
Vds - Drain-Source Breakdown Voltage 100 V
Pd - Power Dissipation 400 mW
Transistor Polarity P-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Rds On - Drain-Source Resistance 5 Ohms
Id - Continuous Drain Current 300 mA
Technology Si
Number of Channels 1 ChannelChannel
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