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2N2222AUA Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-CLCC
Number of Pins 4Pins
Supplier Device Package Ceramic SMD
Collector-Emitter Breakdown Voltage 50V
Current-Collector (Ic) (Max) 800mA
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Polarity NPN
Element Configuration Single
Power Dissipation 500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 800mA
Height 1.905mm
Length 5.715mm
Width 3.937mm
RoHS Status Non-RoHS Compliant
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2N2222AUA Documents

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