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2N2222AUB Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer
Factory Lead Time 25 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-LCC
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier 2N2222AUB
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 30
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 15mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 200°C
Height 1.42mm
Length 3.175mm
Width 2.667mm
RoHS Status Non-RoHS Compliant
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