2N2907AUB Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer
Factory Lead Time 25 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-LCC
Number of Pins 3Pins
Supplier Device Package Ceramic SMD
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 600mA
hFEMin 100
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 300mW
Polarity PNP
Element Configuration Single
Power Dissipation 400mW
Power - Max 300mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 600mA
Height 1.4224mm
Length 3.2258mm
Width 2.7178mm
RoHS Status Non-RoHS Compliant
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