TT Electronics/Optek Technology 2N5796U Arrays BJT Transistors
60V 600mA
IN STOCK
: 38
Min. : 1
Mult. : 1
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2N5796U Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | ||
| Factory Lead Time | 15 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-CLCC | |
| Number of Pins | 6Pins | |
| Supplier Device Package | 6-CLCC | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Current-Collector (Ic) (Max) | 600mA | |
| Number of Elements | 2 Elements | |
| hFEMin | 75 | |
| Operating Temperature | -65°C~200°C TJ | |
| Packaging | Bulk | |
| Published | 1997 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 200°C | |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power Dissipation | 600mW | |
| Power - Max | 600mW | |
| Transistor Type | 2 PNP (Dual) | |
| Collector Emitter Voltage (VCEO) | 60V | |
| Max Collector Current | 600mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V | |
| Current - Collector Cutoff (Max) | 10nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Collector Base Voltage (VCBO) | 60V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 2.032mm | |
| Length | 6.35mm | |
| Width | 4.445mm | |
| Radiation Hardening | No | |
| RoHS Status | Non-RoHS Compliant |
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2N5796U Documents
Download datasheets and manufacturer documentation for 2N5796U
- Datasheets2N5796U
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