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UF3C120080B7S Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | UnitedSiC | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | |
Supplier Device Package | D2PAK-7 | |
Mfr | UnitedSiC | |
Product Status | Active | |
Current - Continuous Drain (Id) @ 25℃ | 28.8A (Tc) | |
Power Dissipation (Max) | 190W (Tc) | |
Base Product Number | UF3C120080 | |
Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
Moisture Sensitive | Yes | |
Typical Turn-On Delay Time | 31 ns, 33 ns | |
Vgs th - Gate-Source Threshold Voltage | 6 V | |
Pd - Power Dissipation | 190 W | |
Transistor Polarity | N-Channel | |
Maximum Operating Temperature | + 175 C | |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | |
Minimum Operating Temperature | - 55 C | |
Factory Pack QuantityFactory Pack Quantity | 800 | |
Mounting Styles | Through Hole | |
Channel Mode | Enhancement | |
Manufacturer | UnitedSiC | |
Brand | UnitedSiC |
Qg - Gate Charge | 23 nC | |
Tradename | SiC FET | |
Rds On - Drain-Source Resistance | 85 mOhms | |
RoHS | Details | |
Typical Turn-Off Delay Time | 30 ns | |
Id - Continuous Drain Current | 28.8 A | |
Series | - | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Packaging | Cut Tape | |
Subcategory | MOSFETs | |
Configuration | Single | |
Number of Channels | 1 ChannelChannel | |
FET Type | N-Channel | |
Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V | |
Vgs(th) (Max) @ Id | 6V @ 10mA | |
Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V | |
Rise Time | 7 ns, 6 ns | |
Drain to Source Voltage (Vdss) | 1200 V | |
Vgs (Max) | ±25V | |
Product Type | MOSFET | |
FET Feature | - | |
Product Category | MOSFET |
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