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UF3N170400B7S Tech Specifications

Category Transistors - JFETs
Manufacturer UnitedSiC
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package D2PAK-7
Mfr UnitedSiC
Product Status Active
Vds - Drain-Source Breakdown Voltage 1.7 kV
Pd - Power Dissipation 68 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Rds On - Drain-Source Resistance 400 mOhms
Gate-Source Cutoff Voltage - 20 V to 3 V
Id - Continuous Drain Current 6.8 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Technology SiC
Configuration Single
Power - Max 68 W
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Drain to Source Voltage (Vdss) 1.7 V
Current - Drain (Idss) @ Vds (Vgs=0) 2.2 μA @ 1.7 V
Voltage - Breakdown (V(BR)GSS) 1.7 V
Resistance - RDS(On) 500 mOhms
Current Drain (Id) - Max 6.8 A
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