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UF3SC065030B7S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer UnitedSiC
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package D2PAK-7
Mfr UnitedSiC
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Power Dissipation (Max) 214W (Tc)
Vds - Drain-Source Breakdown Voltage 650 V
Moisture Sensitive Yes
Typical Turn-On Delay Time 23 ns
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 214 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 25 V, + 25 V
Unit Weight 0.164906 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 800
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer UnitedSiC
Brand UnitedSiC
Qg - Gate Charge 43 nC
Tradename SiC FET
Rds On - Drain-Source Resistance 27 mOhms
RoHS Details
Typical Turn-Off Delay Time 46 ns
Id - Continuous Drain Current 62 A
Series -
Operating Temperature 175°C (TJ)
Packaging Cut Tape
Type SiC FET
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 40A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 12 V
Rise Time 26 ns, 28 ns
Drain to Source Voltage (Vdss) 650 V
Vgs (Max) ±25V
Product Type MOSFET
FET Feature -
Product SiC FET
Product Category MOSFET
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