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UF3SC120016K4S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer UnitedSiC
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Mfr UnitedSiC
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Power Dissipation (Max) 517W (Tc)
Base Product Number UF3SC120016
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 4 V
Qualification AEC-Q101
Pd - Power Dissipation 517 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.211644 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer UnitedSiC
Brand UnitedSiC
Qg - Gate Charge 218 nC
Tradename SiC FET
Rds On - Drain-Source Resistance 21 mOhms
RoHS Details
Id - Continuous Drain Current 107 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 21mOhm @ 50A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 7824 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 218 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±20V
Product Type MOSFET
FET Feature -
Product Category MOSFET
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