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UF4SC120030K4S Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer UnitedSiC
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Mfr UnitedSiC
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Power Dissipation (Max) 341W (Tc)
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 341 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Channel Mode Depletion
Manufacturer UnitedSiC
Brand UnitedSiC
Qg - Gate Charge 37.8 nC
Rds On - Drain-Source Resistance 39 mOhms
RoHS Details
Id - Continuous Drain Current 53 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 39mOhm @ 20A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 37.8 nC @ 800 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±20V
Product Type MOSFET
FET Feature -
Product Category MOSFET
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