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UJ3N065025K3S Tech Specifications

Category Transistors - JFETs
Manufacturer UnitedSiC
Package / Case TO-247-3
Mounting Type Through Hole
Supplier Device Package TO-247-3
Base Product Number UJ3N065025
Product Status Active
Package Tube
Mfr UnitedSiC
Vds - Drain-Source Breakdown Voltage 650 V
Qualification AEC-Q101
Pd - Power Dissipation 441 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Unit Weight 0.338401 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Manufacturer UnitedSiC
Brand UnitedSiC
Tradename Sic JFET
Rds On - Drain-Source Resistance 25 mOhms
RoHS Details
Vgs - Gate-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 85 A
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Packaging Tube
Subcategory Transistors
Technology SiC
Configuration Single
Power - Max 441 W
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 100V
Drain to Source Voltage (Vdss) 650 V
Product Type JFETs
Voltage - Breakdown (V(BR)GSS) 650 V
Resistance - RDS(On) 33 mOhms
Current Drain (Id) - Max 85 A
Product Category JFET
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