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UJ3N120035K3S Tech Specifications

Category Transistors - JFETs
Manufacturer UnitedSiC
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Mfr UnitedSiC
Package Tube
Product Status Active
Base Product Number UJ3N120035
Vds - Drain-Source Breakdown Voltage 1200 V
Qualification AEC-Q101
Pd - Power Dissipation 429 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Unit Weight 0.480890 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Mounting Styles Through Hole
Manufacturer UnitedSiC
Brand UnitedSiC
Tradename Sic JFET
Rds On - Drain-Source Resistance 35 mOhms
RoHS Details
Vgs - Gate-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 63 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory Transistors
Technology SiC
Configuration Single
Power - Max 429 W
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2145pF @ 100V
Drain to Source Voltage (Vdss) 1200 V
Product Type JFETs
Voltage - Breakdown (V(BR)GSS) 1200 V
Resistance - RDS(On) 45 mOhms
Current Drain (Id) - Max 63 A
Product Category JFET
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