IRF9520NPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Process Technology HEXFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 6.8
Maximum Drain Source Resistance (MOhm) 480@10V
Typical Gate Charge @ Vgs (nC) 27(Max)@10V
Typical Gate Charge @ 10V (nC) 27(Max)
Typical Input Capacitance @ Vds (pF) 350@25V
Maximum Power Dissipation (mW) 48000
Typical Fall Time (ns) 31
Typical Rise Time (ns) 47
Typical Turn-Off Delay Time (ns) 28
Typical Turn-On Delay Time (ns) 14
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Through Hole
Package Height 8.77(Max)
Package Width 4.69(Max)
Package Length 10.54(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-220
Supplier Package TO-220AB
Lead Shape Through Hole
Packaging Tube
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type P
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