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IRF9Z20PBF Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Vishay
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -50V
Drain current -9.7A
Pulsed drain current -39A
Case TO220AB
Gate-source voltage ±20V
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 2g
Certificates RoHS compliant
Power dissipation 40W
Gate charge 26nC
On-state resistance 0.28Ω
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