IRFD9024PBF Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Vishay
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -1.1A
Case DIP4
Gate-source voltage ±20V
Mounting THT
Kind of channel enhanced
Gross weight 0.307g
Certificates RoHS compliant
Power dissipation 1.3W
Gate charge 19nC
On-state resistance 0.28Ω
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