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IRFD9210PBF Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Vishay
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -200V
Drain current -0.25A
Case DIP4
Gate-source voltage ±20V
Mounting THT
Kind of channel enhanced
Gross weight 0.307g
Certificates RoHS compliant
Power dissipation 1W
Gate charge 8.9nC
On-state resistance 3Ω
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