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IRFU9110PBF Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Vishay
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -3.1A
Pulsed drain current -12A
Case1 TO251
Case IPAK
Gate-source voltage ±20V
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 1g
Certificates RoHS compliant
Power dissipation 25W
Gate charge 8.7nC
On-state resistance 1.2Ω
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