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SUP70101EL-GE3 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Vishay
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -120A
Pulsed drain current -240A
Case TO220AB
Gate-source voltage ±20V
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 2.077g
Certificates RoHS compliant
Power dissipation 375W
Gate charge 0.19µC
On-state resistance 15mΩ
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