U309-E3 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Surface Mount NO
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 1
Maximum Gate Source Voltage (V) -25
Maximum Gate Source Leakage Current (nA) 1
Maximum IDSS (uA) 30000
Maximum Drain Source Resistance (mOhm) 35000(Typ)
Typical Input Capacitance @ Vds (pF) 4@10V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.9@10V
Typical Forward Transconductance (S) 0.014
Maximum Power Dissipation (mW) 500
Typical Power Gain (dB) 16
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Standard Package Name TO-52
Supplier Package TO-52
Military No
Mounting Through Hole
Package Height 3.81(Max)
Package Length 5.84(Max)
Package Width 5.84(Max)
PCB changed 3
Package Description ,
Moisture Sensitivity Levels 1
Operating Temperature-Max 150 °C
Rohs Code Yes
Manufacturer Part Number U309-E3
Manufacturer Vishay Intertechnologies
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Risk Rank 5.83
JESD-609 Code e3
Part Status Obsolete
Type JFET
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Reach Compliance Code unknown
Pin Count 3
Configuration Single
Polarity/Channel Type N-CHANNEL
Channel Type N
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.5 W
RoHS Status RoHS Compliant
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