Vishay Intertechnologies SI4618DY-T1-E3 Specialized Transistors
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SI4618DY-T1-E3 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Vishay | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | ROHS COMPLIANT, SOP-8 | |
| Drain Current-Max (ID) | 6.7 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 11.2 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 4.16 W | |
| Saturation Current | 1 |
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SI4618DY-T1-E3 Documents
Download datasheets and manufacturer documentation for SI4618DY-T1-E3
- Datasheets695d68989736e5401cbd2150df1edaf3.pdf
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