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SI7112DN-T1-GE3 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Vishay
Factory Lead Time 18 Weeks
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of capacitor ceramic
Kind of capacitor MLCC
Mounting SMD
Case - inch 0402
Case - mm 1005
Gross weight 0.03 g
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Drain Current-Max (ID) 11.3 A
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style SMALL OUTLINE
Operating temperature -55...125°C
Tolerance ±20%
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Capacitance 1µF
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-XDSO-C5
Qualification Status Not Qualified
Dielectric X7T
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0075 Ω
Pulsed Drain Current-Max (IDM) 60 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 20 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 3.8 W
Saturation Current 1
Operating voltage 4V
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