Vishay Intertechnologies SIHG33N60E-GE3 Specialized Transistors
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SIHG33N60E-GE3 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Vishay | |
| Factory Lead Time | 18 Weeks | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
| Drain Current-Max (ID) | 33 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-247AC | |
| Drain-source On Resistance-Max | 0.099 Ω | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 793 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 278 W |
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SIHG33N60E-GE3 Documents
Download datasheets and manufacturer documentation for SIHG33N60E-GE3
- Datasheets49cfbe69611db17d370e4faefccee85d.pdf
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