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SIR826DP-T1-GE3 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Vishay
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID) 60 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-C5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0052 Ω
Pulsed Drain Current-Max (IDM) 100 A
DS Breakdown Voltage-Min 80 V
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 104 W
Saturation Current 1
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SIR826DP-T1-GE3 Documents

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