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SQ1922EEH-T1_GE3 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Vishay
Factory Lead Time 15 Weeks
Surface Mount YES
Number of Terminals 6Terminals
Transistor Element Material SILICON
Exterior Housing Material 2
Drain Current-Max (ID) 0.84 A
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Package Description SC-70, 6 PIN
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Life Cycle Code Active
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish TIN
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code unknown
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.6 Ω
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Saturation Current 1
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SQ1922EEH-T1_GE3 Documents

Download datasheets and manufacturer documentation for   SQ1922EEH-T1_GE3

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