SUP40012EL-GE3 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Vishay
Factory Lead Time 16 Weeks
Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Date Of Intro 2018-11-13
Drain Current-Max (ID) 150 A
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Turn-off Time-Max (toff) 166 ns
Turn-on Time-Max (ton) 74 ns
Gross weight 0.21
Transport packaging size/quantity 39*19*20.5/5000
Mounting method SMD
Case material ceramic
Operating temperature -55...+125 °C
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Depth 6.1 mm
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Fuse type Fuse link in SMD case 2410
Polarity/Channel Type N-CHANNEL
Rated current 0.25 A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.00179 Ω
Pulsed Drain Current-Max (IDM) 300 A
DS Breakdown Voltage-Min 40 V
Avalanche Energy Rating (Eas) 125 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Rated voltage 125 V
Feedback Cap-Max (Crss) 101 pF
Height 2.6 mm
Width 2.6 mm
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