IRFD9210 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Precision Group
Package / Case 4-DIP (0.300, 7.62mm)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
RoHS Compliant
Power Dissipation (Max) 1W (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Other Names *IRFD9210
Current - Continuous Drain (Id) @ 25℃ 400mA (Ta)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Packaging Tube
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 10V
Drain to Source Voltage (Vdss) 200V
Vgs (Max) ±20V
FET Feature -
Length 406 mm
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