IRLD110 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Precision Group
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Current - Continuous Drain (Id) @ 25℃ 1A (Ta)
Other Names *IRLD110
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Packaging Tube
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±10V
FET Feature -
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