Vishay Precision Group SIS780DN-T1-GE3 Single MOSFETs Transistors
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SIS780DN-T1-GE3 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Vishay Precision Group | |
| Mounting Type | Surface Mount | |
| Package / Case | PowerPAK® 1212-8 | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| RoHS | Non-Compliant | |
| Current - Continuous Drain (Id) @ 25℃ | 18A (Tc) | |
| Other Names | SIS780DN-T1-GE3-ND SIS780DN-T1-GE3TR | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 27.7W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | - |
| Packaging | Tape & Reel (TR) | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Technology | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 722pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 24.5nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Vgs (Max) | ±20V | |
| FET Feature | Schottky Diode (Body) |
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