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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Number of Terminals | Transistor Element Material | Ihs Manufacturer | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Rise Time-Max (tr) | Rohs Code | Turn-off Time-Max (toff) | Turn-off Time-Nom (toff) | Turn-on Time-Max (ton) | Turn-on Time-Nom (ton) | JESD-609 Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | JESD-30 Code | Qualification Status | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | Gate-Emitter Voltage-Max | VCEsat-Max | Gate-Emitter Thr Voltage-Max | Power Dissipation Ambient-Max | Fall Time-Max (tf) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #APT110GL100JNElecinsight Part #3044-372-APT110GL100JN | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 110A I(C), 1000V V(BR)CES, N-Channel, ISOTOP-4
Datasheet
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| Min.:1 Mult.:1 | NO | 4 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PUFM-X4 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | LOW CONDUCTION LOSS | 8541.29.00.95 | UPPER | UNSPECIFIED | - | unknown | - | R-PUFM-X4 | Not Qualified | SINGLE | ISOLATED | - | N-CHANNEL | - | - | 110 A | 1000 V | - | 3 V | - | 415 W | - | ||
| APT110GL100JN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GP60BDF1Elecinsight Part #3044-372-APT15GP60BDF1 | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | TO-247, 3 PIN | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | 157 ns | - | 20 ns | - | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | - | 56 A | 600 V | - | - | - | - | - | ||
| APT15GP60BDF1 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT35GP120B2DF2Elecinsight Part #3044-372-APT35GP120B2DF2 | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | IN-LINE, R-PSIP-T3 | RECTANGULAR | IN-LINE | Obsolete | - | - | - | 220 ns | - | 36 ns | - | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSIP-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | - | - | 96 A | 1200 V | - | - | - | - | - | ||
| APT35GP120B2DF2 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTGF150X60TE3GElecinsight Part #3044-372-APTGF150X60TE3G | Advanced Power Technology |
Description: Insulated Gate Bipolar Transistor,
Datasheet
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| Min.:1 Mult.:1 | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | , | - | - | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTGF150X60TE3G | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT32GU30BElecinsight Part #3044-372-APT32GU30B | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 274 ns | - | 41 ns | - | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | - | 55 A | 300 V | - | - | - | - | - | ||
| APT32GU30B | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GF100BNElecinsight Part #3044-372-APT50GF100BN | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | 130 ns | No | 115 ns | 75 ns | 40 ns | 20 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | FAST SWITCHING | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | - | N-CHANNEL | TO-247 | 245 W | 50 A | 1000 V | 20 V | 3.7 V | 6 V | 260 W | 800 ns | ||
| APT50GF100BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GT60BRElecinsight Part #3044-372-APT15GT60BR | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | 18 ns | No | - | 258 ns | - | 24 ns | e0 | EAR99 | TIN LEAD | AVALANCHE RATED | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247 | 125 W | 30 A | 600 V | 20 V | - | 5 V | - | 78 ns | ||
| APT15GT60BR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT20GF120BRDQ1Elecinsight Part #3044-372-APT20GF120BRDQ1 | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 255 ns | - | 19 ns | - | EAR99 | - | HIGH RELIABILITY | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247 | - | 36 A | 1200 V | - | - | - | - | - | ||
| APT20GF120BRDQ1 | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTGT150X120E3GElecinsight Part #3044-372-APTGT150X120E3G | Advanced Power Technology |
Insulated Gate Bipolar Transistor,
Datasheet
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| Min.:1 Mult.:1 | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | , | - | - | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTGT150X120E3G | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GN120KElecinsight Part #3044-372-APT15GN120K | Advanced Power Technology |
Description: Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 355 ns | - | 19 ns | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-220AB | - | 45 A | 1200 V | - | - | - | - | - | ||
| APT15GN120K | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GF60HRElecinsight Part #3044-372-APT50GF60HR | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, TO-258, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | METAL | FLANGE MOUNT, R-MSFM-P3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | 450 ns | - | 120 ns | e0 | EAR99 | TIN LEAD | - | - | SINGLE | PIN/PEG | - | unknown | - | R-MSFM-P3 | Not Qualified | SINGLE | - | POWER CONTROL | N-CHANNEL | TO-258AA | 180 W | 55 A | 600 V | 20 V | - | 6.5 V | - | - | ||
| APT50GF60HR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT25GT120BRElecinsight Part #3044-372-APT25GT120BR | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 220 ns | - | 41 ns | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247 | - | 54 A | 1200 V | - | - | - | - | - | ||
| APT25GT120BR | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GF60LRDElecinsight Part #3044-372-APT50GF60LRD | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | 460 ns | - | 120 ns | e0 | EAR99 | TIN LEAD | FAST SWITCHING | - | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-264AA | 300 W | 80 A | 600 V | 20 V | - | 6.5 V | - | - | ||
| APT50GF60LRD | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT25GP90BElecinsight Part #3044-372-APT25GP90B | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 72A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Datasheet
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| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 190 ns | - | 29 ns | - | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | - | 72 A | 900 V | - | - | - | - | - | ||
| APT25GP90B | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT30GN60BElecinsight Part #3044-372-APT30GN60B | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | - | No | - | 255 ns | - | 26 ns | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | NOT SPECIFIED | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | TO-247AD | - | 63 A | 600 V | - | - | - | - | - | ||
| APT30GN60B | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APTGT300U170D4GElecinsight Part #3044-372-APTGT300U170D4G | Advanced Power Technology |
Insulated Gate Bipolar Transistor,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | ADVANCED POWER TECHNOLOGY INC | - | - | - | , | - | - | Transferred | - | - | - | - | - | - | - | EAR99 | - | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| APTGT300U170D4G | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT15GP60SElecinsight Part #3044-372-APT15GP60S | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, D3PAK-3
Datasheet
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| Min.:1 Mult.:1 | YES | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | 157 ns | - | 20 ns | - | EAR99 | - | LOW CONDUCTION LOSS | - | SINGLE | GULL WING | - | unknown | - | R-PSSO-G3 | Not Qualified | SINGLE | COLLECTOR | POWER CONTROL | N-CHANNEL | - | - | 56 A | 600 V | - | - | - | - | - | ||
| APT15GP60S | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT50GL60BNElecinsight Part #3044-372-APT50GL60BN | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | 100 ns | No | 85 ns | 55 ns | 30 ns | 15 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | LOW CONDUCTION LOSS | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | - | N-CHANNEL | TO-247 | 200 W | 50 A | 600 V | 20 V | 2.5 V | 6 V | 200 W | 700 ns | ||
| APT50GL60BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT35GL60BNElecinsight Part #3044-372-APT35GL60BN | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-247
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 3 | SILICON | ADVANCED POWER TECHNOLOGY INC | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | 100 ns | No | 55 ns | 35 ns | 30 ns | 15 ns | e0 | EAR99 | Tin/Lead (Sn/Pb) | LOW CONDUCTION LOSS | 8541.29.00.95 | SINGLE | THROUGH-HOLE | - | unknown | - | R-PSFM-T3 | Not Qualified | SINGLE | COLLECTOR | - | N-CHANNEL | TO-247 | 147 W | 35 A | 600 V | 20 V | 2.5 V | 6 V | 147 W | 700 ns | ||
| APT35GL60BN | ||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #APT35G50BNElecinsight Part #3044-372-APT35G50BN | Advanced Power Technology |
Insulated Gate Bipolar Transistor, 35A I(C), 500V V(BR)CES, N-Channel
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | - | ADVANCED POWER TECHNOLOGY INC | - | 150 °C | - | , | - | - | Obsolete | - | No | - | - | - | - | e0 | EAR99 | Tin/Lead (Sn/Pb) | - | - | - | - | - | unknown | - | - | - | - | - | - | N-CHANNEL | - | 162 W | 35 A | 500 V | 20 V | - | 5 V | - | - | ||
| APT35G50BN |
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