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  • Transistors - IGBTs - Single
Image Part # Manufacturer Description Pricing Quantity RoHS Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Schedule B Test Conditions Tradename Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Voltage Rating (DC) Operating Temperature Packaging Series JESD-609 Code Pbfree Code ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Power - Max Transistor Application Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Power Dissipation-Max (Abs) Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Height Length Width Radiation Hardening Lead Free
Image Part # Manufacturer Description Pricing Quantity RoHS Lifecycle Status Mount Mounting Type Package / Case Surface Mount Number of Pins Supplier Device Package Weight Number of Terminals Transistor Element Material Base Product Number Collector- Emitter Voltage VCEO Max Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Gate-Emitter Leakage Current Ihs Manufacturer Manufacturer Part Number Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Mounting Styles Number of Elements Operating Temperature-Max Package Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Part Package Code Pd - Power Dissipation Product Status Reflow Temperature-Max (s) Risk Rank RoHS Rohs Code Schedule B Test Conditions Tradename Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) Unit Weight Voltage Rating (DC) Operating Temperature Packaging Series JESD-609 Code Pbfree Code ECCN Code Terminal Finish Max Operating Temperature Min Operating Temperature Additional Feature Max Power Dissipation Terminal Position Terminal Form Peak Reflow Temperature (Cel) Reach Compliance Code Current Rating Pin Count JESD-30 Code Qualification Status Configuration Element Configuration Power Dissipation Case Connection Input Type Power - Max Transistor Application Polarity/Channel Type Collector Emitter Voltage (VCEO) Max Collector Current Operating Temperature Range Reverse Recovery Time JEDEC-95 Code Voltage - Collector Emitter Breakdown (Max) Power Dissipation-Max (Abs) Vce(on) (Max) @ Vge, Ic Collector Current-Max (IC) Continuous Collector Current IGBT Type Collector-Emitter Voltage-Max Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Gate-Emitter Voltage-Max Gate-Emitter Thr Voltage-Max Reverse Recovery Time (trr) Height Length Width Radiation Hardening Lead Free
Microchip Technology APT40GT60BRG
Mfr. Part #
APT40GT60BRG
Elecinsight Part #
536-372-APT40GT60BRG
IN STOCK: 761
Microchip Technology
IGBT Transistors FG
Datasheet Compare
    Min.:1
    Mult.:1
    - - Through Hole TO-247-3 NO - TO-247 [B] - 3 SILICON APT40GT60 600 V - 2.15 V 80 A 80 A 80 A 1 100 nA MICROSEMI CORP APT40GT60BRG - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY FLANGE MOUNT, R-PSFM-T3 RECTANGULAR FLANGE MOUNT Active TO-247 345 W Active NOT SPECIFIED 1.24 Details Yes - 400V, 40A, 5Ohm, 15V Thunderbolt IGBT 353 ns 63 ns 1.340411 oz - -55°C ~ 150°C (TJ) Tube Thunderbolt IGBT® e1 Yes EAR99 TIN SILVER COPPER - - AVALANCHE RATED - SINGLE THROUGH-HOLE NOT SPECIFIED compliant - 3 R-PSFM-T3 Not Qualified Single - - COLLECTOR Standard 345 W POWER CONTROL N-CHANNEL - - - 55 C to + 150 C - TO-247 600 V - 2.5V @ 15V, 40A 80 A 80 A NPT 600 V 200 nC 160 A 12ns/124ns 828µJ (off) - - - 5.31 mm 21.46 mm 16.26 mm - -
    APT40GT60BRG
    APT40GT60BRG

    536-372-APT40GT60BRG Microchip Technology
    RoHS :
    Package : -
    In Stock : 761
    1 : -
    Microchip Technology APT15GP60BDQ1G
    Mfr. Part #
    APT15GP60BDQ1G
    Elecinsight Part #
    536-372-APT15GP60BDQ1G
    IN STOCK: 12
    Microchip Technology
    IGBT Transistors FG
    Datasheet Compare
      Min.:1
      Mult.:1
      - - Through Hole TO-247-3 - - TO-247 [B] - - - APT15GP60 600 V - 2.2 V 56 A - 56 A 1 - - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 250 W Active - - Details - - 400V, 15A, 5Ohm, 15V - - - 0.208116 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 7® - - - - - - - - - - - - - - - - Single - 250 - Standard 250 W - - - - - - - 600 V - 2.7V @ 15V, 15A - 56 PT - 55 nC 65 A 8ns/29ns 130µJ (on), 120µJ (off) - - - - - - - -
      APT15GP60BDQ1G
      APT15GP60BDQ1G

      536-372-APT15GP60BDQ1G Microchip Technology
      RoHS :
      Package : -
      In Stock : 12
      1 : -
      Microchip Technology APT35GP120BG
      Mfr. Part #
      APT35GP120BG
      Elecinsight Part #
      536-372-APT35GP120BG
      IN STOCK: 93
      Microchip Technology
      IGBT Transistors FG
      Datasheet Compare
        Min.:1
        Mult.:1
        - - Through Hole TO-247-3 - - TO-247 [B] - - - APT35GP120 1.2 kV - 3.3 V 96 A - 96 A 1 - - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 543 W Active - - Details - - 600V, 35A, 5Ohm, 15V - - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 7® - - - - - - - - - - - - - - - - Single - 543 - Standard 543 W - - - - - - - 1200 V - 3.9V @ 15V, 35A - 96 PT - 150 nC 140 A 16ns/94ns 750µJ (on), 680µJ (off) - - - - - - - -
        APT35GP120BG
        APT35GP120BG

        536-372-APT35GP120BG Microchip Technology
        RoHS :
        Package : -
        In Stock : 93
        1 : -
        Microchip Technology APT75GN60LDQ3G
        Mfr. Part #
        APT75GN60LDQ3G
        Elecinsight Part #
        536-372-APT75GN60LDQ3G
        IN STOCK: 45
        Microchip Technology
        IGBT Transistors FG
        Datasheet Compare
          Min.:1
          Mult.:1
          - - Through Hole TO-264-3 - - TO-264 [L] - - - APT75GN60 600 V - 1.45 V 155 A 155 A 155 A 1 600 nA - - - 30 V, + 30 V + 175 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 536 W Active - - Details - - 400V, 75A, 1Ohm, 15V - - - 0.373904 oz - -55°C ~ 175°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - - - Standard 536 W - - - - - 55 C to + 175 C - - 600 V - 1.85V @ 15V, 75A - 155 A Trench Field Stop - 485 nC 225 A 47ns/385ns 2500µJ (on), 2140µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm - -
          APT75GN60LDQ3G
          APT75GN60LDQ3G

          536-372-APT75GN60LDQ3G Microchip Technology
          RoHS :
          Package : -
          In Stock : 45
          1 : -
          Microchip Technology APT65GP60B2G
          Mfr. Part #
          APT65GP60B2G
          Elecinsight Part #
          536-372-APT65GP60B2G
          IN STOCK: 133
          Microchip Technology
          IGBT Transistors FG
          Datasheet Compare
            Min.:1
            Mult.:1
            - - Through Hole TO-247-3 - - - - - - APT65GP60 600 V - 2.2 V 100 A - 100 A 1 - - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 833 W Active - - Details - - 400V, 65A, 5Ohm, 15V - - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 7® - - - - - - - - - - - - - - - - Single - - - Standard 833 W - - - - - - - 600 V - 2.7V @ 15V, 65A - - PT - 210 nC 250 A 30ns/91ns 605µJ (on), 896µJ (off) - - - - - - - -
            APT65GP60B2G
            APT65GP60B2G

            536-372-APT65GP60B2G Microchip Technology
            RoHS :
            Package : -
            In Stock : 133
            1 : -
            Microchip Technology APT13GP120BG
            Mfr. Part #
            APT13GP120BG
            Elecinsight Part #
            536-372-APT13GP120BG
            IN STOCK: 8
            Microchip Technology
            IGBT Transistors FG
            Datasheet Compare
              Min.:1
              Mult.:1
              - - Through Hole TO-247-3 - - TO-247 [B] - - - APT13GP120 1.2 kV - 3.3 V 41 A - 41 A 1 - - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 250 W Active - - Details - - 600V, 13A, 5Ohm, 15V - - - 0.208116 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 7® - - - - - - - - - - - - - - - - Single - 250 - Standard 250 W - - - - - - - 1200 V - 3.9V @ 15V, 13A - 41 PT - 55 nC 50 A 9ns/28ns 115µJ (on), 165µJ (off) - - - - - - - -
              APT13GP120BG
              APT13GP120BG

              536-372-APT13GP120BG Microchip Technology
              RoHS :
              Package : -
              In Stock : 8
              1 : -
              Microchip Technology APT35GP120B2DQ2G
              Mfr. Part #
              APT35GP120B2DQ2G
              Elecinsight Part #
              536-372-APT35GP120B2DQ2G
              IN STOCK: 76
              Microchip Technology
              IGBT Transistors FG
              Datasheet Compare
                Min.:1
                Mult.:1
                Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 - 3 - - - - APT35GP120 - 1.2 kV - - - 96 A 1 - - - - - Microchip Technology - Through Hole - - Tube - - - - - - - Active - - Details - 8541290080/8541290080 600V, 35A, 4.3Ohm, 15V - - - 1.340411 oz 1.2 kV -55°C ~ 150°C (TJ) Tube POWER MOS 7® - - - - 150 °C -55 °C - 543 W - - - - 96 A - - - - Single - - Standard 543 W - - 1.2 kV 96 A - - - 1200 V - 3.9V @ 15V, 35A - - PT - 150 nC 140 A 16ns/95ns 750µJ (on), 680µJ (off) - - - - - - No Lead Free
                APT35GP120B2DQ2G
                APT35GP120B2DQ2G

                536-372-APT35GP120B2DQ2G Microchip Technology
                RoHS :
                Package : -
                In Stock : 76
                1 : -
                Microchip Technology APT15GN120BDQ1G
                Mfr. Part #
                APT15GN120BDQ1G
                Elecinsight Part #
                536-372-APT15GN120BDQ1G
                IN STOCK: 8
                Microchip Technology
                IGBT Transistors FG
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  - - Through Hole TO-247-3 - - TO-247 [B] - - - APT15GN120 1.2 kV - 1.7 V 45 A - 45 A 1 - - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 195 W Active - - Details - - 800V, 15A, 4.3Ohm, 15V - - - 0.208116 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - - - Standard 195 W - - - - - - - 1200 V - 2.1V @ 15V, 15A - - Trench Field Stop - 90 nC 45 A 10ns/150ns 410µJ (on), 950µJ (off) - - - - - - - -
                  APT15GN120BDQ1G
                  APT15GN120BDQ1G

                  536-372-APT15GN120BDQ1G Microchip Technology
                  RoHS :
                  Package : -
                  In Stock : 8
                  1 : -
                  Microchip Technology APT50GF120LRG
                  Mfr. Part #
                  APT50GF120LRG
                  Elecinsight Part #
                  536-372-APT50GF120LRG
                  IN STOCK: 76
                  Microchip Technology
                  IGBT Transistors FG
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    - - Through Hole TO-264-3 - - TO-264 [L] - - - APT50GF120 1.2 kV - 2.5 V 135 A - 135 A 1 100 nA - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 781 W Active - - Details - - 800V, 50A, 1Ohm, 15V - - - 0.352740 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - - - Standard 781 W - - - - - - - 1200 V - 3V @ 15V, 50A - - NPT - 340 nC 150 A 25ns/260ns 3.6mJ (on), 2.64mJ (off) - - - - - - - -
                    APT50GF120LRG
                    APT50GF120LRG

                    536-372-APT50GF120LRG Microchip Technology
                    RoHS :
                    Package : -
                    In Stock : 76
                    1 : -
                    Microchip Technology APT50GN60BDQ2G
                    Mfr. Part #
                    APT50GN60BDQ2G
                    Elecinsight Part #
                    536-372-APT50GN60BDQ2G
                    IN STOCK: 45
                    Microchip Technology
                    IGBT Transistors FG
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      - - Through Hole TO-247-3 - - TO-247 [B] - - - APT50GN60 600 V - 1.45 V 107 A 107 A 107 A 1 600 nA - - - 30 V, + 30 V + 175 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 366 W Active - - Details - - 400V, 50A, 4.3Ohm, 15V - - - 1.340411 oz - -55°C ~ 175°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - 366 - Standard 366 W - - - - - 55 C to + 175 C - - 600 V - 1.85V @ 15V, 50A - 107 A Trench Field Stop - 325 nC 150 A 20ns/230ns 1185µJ (on), 1565µJ (off) - - - 5.31 mm 21.46 mm 16.26 mm - -
                      APT50GN60BDQ2G
                      APT50GN60BDQ2G

                      536-372-APT50GN60BDQ2G Microchip Technology
                      RoHS :
                      Package : -
                      In Stock : 45
                      1 : -
                      Microchip Technology APT75GN120LG
                      Mfr. Part #
                      APT75GN120LG
                      Elecinsight Part #
                      536-372-APT75GN120LG
                      IN STOCK: 175
                      Microchip Technology
                      IGBT Transistors FG
                      Datasheet Compare
                        Min.:1
                        Mult.:1
                        - - Through Hole TO-264-3 - - TO-264 [L] - - - APT75GN120 1.2 kV - 1.7 V 200 A 200 A 200 A 1 600 nA - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 833 W Active - - Details - - 800V, 75A, 1Ohm, 15V - - - 0.373904 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - 833 - Standard 833 W - - - - - 55 C to + 150 C - - 1200 V - 2.1V @ 15V, 75A - 200 A Trench Field Stop - 425 nC 225 A 60ns/620ns 8620µJ (on), 11400µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm - -
                        APT75GN120LG
                        APT75GN120LG

                        536-372-APT75GN120LG Microchip Technology
                        RoHS :
                        Package : -
                        In Stock : 175
                        1 : -
                        Microchip Technology APT80GA60LD40
                        Mfr. Part #
                        APT80GA60LD40
                        Elecinsight Part #
                        536-372-APT80GA60LD40
                        IN STOCK: 42
                        Microchip Technology
                        IGBT Transistors FG
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          Production (Last Updated: 2 months ago) Through Hole Through Hole TO-264-3 NO - TO-264 10.6 g 3 SILICON APT80GA60 600 V 600 V 2 V 143 A 143 A 143 A 1 100 nA MICROSEMI CORP APT80GA60LD40 - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY ROHS COMPLIANT, TO-264, 3 PIN RECTANGULAR FLANGE MOUNT Active TO-264AA 625 W Active NOT SPECIFIED 2.25 Details Yes 8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080 400V, 47A, 4.7Ohm, 15V POWER MOS 8 326 ns 52 ns 0.373904 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 8™ e1 Yes EAR99 Tin/Silver/Copper (Sn/Ag/Cu) 150 °C -55 °C LOW CONDUCTION LOSS 625 W SINGLE THROUGH-HOLE NOT SPECIFIED unknown - 3 R-PSFM-T3 Not Qualified Single Single 625 COLLECTOR Standard 625 W POWER CONTROL N-CHANNEL 600 V 143 A - 55 C to + 150 C 22 ns TO-264AA 600 V - 2.5V @ 15V, 47A 143 A 143 A PT 600 V 230 nC 240 A 23ns/158ns 840µJ (on), 751µJ (off) - - 22 ns 5.21 mm 26.49 mm 20.5 mm No -
                          APT80GA60LD40
                          APT80GA60LD40

                          536-372-APT80GA60LD40 Microchip Technology
                          RoHS :
                          Package : -
                          In Stock : 42
                          1 : -
                          Microchip Technology APT80GA60B
                          Mfr. Part #
                          APT80GA60B
                          Elecinsight Part #
                          536-372-APT80GA60B
                          Microchip Technology
                          IGBT Transistors FG
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            - - Through Hole TO-247-3 - - TO-247 [B] - - - APT80GA60 600 V - 2 V 143 A 143 A 143 A 1 100 nA - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 625 W Active - - Details - - 400V, 47A, 4.7Ohm, 15V POWER MOS 8 - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - - - Standard 625 W - - - - - 55 C to + 150 C - - 600 V - 2.5V @ 15V, 47A - 143 A PT - 230 nC 240 A 23ns/158ns 840µJ (on), 751µJ (off) - - - 21.46 mm 16.26 mm 5.31 mm - -
                            APT80GA60B
                            APT80GA60B

                            536-372-APT80GA60B Microchip Technology
                            RoHS :
                            Package : -
                            In Stock : -
                            1 : -
                            Microchip Technology APT54GA60BD30
                            Mfr. Part #
                            APT54GA60BD30
                            Elecinsight Part #
                            536-372-APT54GA60BD30
                            IN STOCK: 38
                            Microchip Technology
                            IGBT Transistors FG
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              - - Through Hole TO-247-3 - - TO-247 [B] - - - APT54GA60 600 V - 2 V 96 A 96 A 96 A 1 +/- 100 nA - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 416 W Active - - Details - - 400V, 32A, 4.7Ohm, 15V - - - 1.340411 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - 416 - Standard 416 W - - - - - 55 C to + 150 C - - 600 V - 2.5V @ 15V, 32A - 96 PT - 28 nC 161 A 17ns/112ns 534µJ (on), 466µJ (off) - - - 4.69 mm 10.8 mm 15.49 mm - -
                              APT54GA60BD30
                              APT54GA60BD30

                              536-372-APT54GA60BD30 Microchip Technology
                              RoHS :
                              Package : -
                              In Stock : 38
                              1 : -
                              Microchip Technology APT25GT120BRDQ2G
                              Mfr. Part #
                              APT25GT120BRDQ2G
                              Elecinsight Part #
                              536-372-APT25GT120BRDQ2G
                              IN STOCK: 165
                              Microchip Technology
                              IGBT Transistors FG
                              Datasheet Compare
                                Min.:1
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                                Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 NO - TO-247 [B] 38.000013 g 3 SILICON APT25GT120 1.2 kV 1.2 kV 3.2 V 54 A 54 A 54 A 1 120 nA MICROSEMI CORP APT25GT120BRDQ2G - 30 V, + 30 V + 150 C Microchip Technology - 55 C Through Hole 1 150 °C Tube PLASTIC/EPOXY ROHS COMPLIANT, TO-247, 3 PIN RECTANGULAR FLANGE MOUNT Active TO-247 347 W Active NOT SPECIFIED 1.18 Details Yes - 800V, 25A, 5Ohm, 15V Thunderbolt IGBT 186 ns 41 ns 1.340411 oz 1.2 kV -55°C ~ 150°C (TJ) Tube Thunderbolt IGBT® e1 Yes EAR99 Tin/Silver/Copper (Sn/Ag/Cu) 150 °C -55 °C - 347 W SINGLE THROUGH-HOLE NOT SPECIFIED unknown 54 A 3 R-PSFM-T3 Not Qualified Single Single 347 COLLECTOR Standard 347 W POWER CONTROL N-CHANNEL 1.2 kV 54 A - 55 C to + 150 C - TO-247 1200 V 347 W 3.7V @ 15V, 25A 54 A 54 A NPT 1200 V 170 nC 75 A 14ns/150ns 930µJ (on), 720µJ (off) 30 V 6.5 V - 5.31 mm 21.46 mm 16.26 mm No Lead Free
                                APT25GT120BRDQ2G
                                APT25GT120BRDQ2G

                                536-372-APT25GT120BRDQ2G Microchip Technology
                                RoHS :
                                Package : -
                                In Stock : 165
                                1 : -
                                Microchip Technology APT40GR120S
                                Mfr. Part #
                                APT40GR120S
                                Elecinsight Part #
                                536-372-APT40GR120S
                                Microchip Technology
                                IGBT Transistors FG
                                Datasheet Compare
                                  Min.:1
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                                  - - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB - - D3Pak - - - APT40GR120 1.2 kV - 3.2 V 88 A - 88 A 1 - - - - 30 V, + 30 V + 150 C Microchip Technology - 55 C SMD/SMT - - Tube - - - - - - 500 W Active - - Details - - 600V, 40A, 4.3Ohm, 15V - - - 0.218699 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - 500 - Standard 500 W - - - - - - - 1200 V - 3.2V @ 15V, 40A - 88 NPT - 210 nC 160 A 22ns/163ns 1.38mJ (on), 906µJ (off) - - - - - - - -
                                  APT40GR120S
                                  APT40GR120S

                                  536-372-APT40GR120S Microchip Technology
                                  RoHS :
                                  Package : -
                                  In Stock : -
                                  1 : -
                                  Microchip Technology APT64GA90LD30
                                  Mfr. Part #
                                  APT64GA90LD30
                                  Elecinsight Part #
                                  536-372-APT64GA90LD30
                                  IN STOCK: 8
                                  Microchip Technology
                                  IGBT Transistors FG
                                  Datasheet Compare
                                    Min.:1
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                                    Production (Last Updated: 2 months ago) Through Hole Through Hole TO-264-3 - - TO-264 [L] 10.6 g - - APT64GA90 900 V 900 V 2.5 V 117 A 117 A 117 A 1 100 nA - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 500 W Active - - Details - - 600V, 38A, 4.7Ohm, 15V POWER MOS 8 - - 0.373904 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 8™ - - - - 150 °C -55 °C - 500 W - - - - - - - - Single Single 500 - Standard 500 W - - 900 V 117 A - 55 C to + 150 C - - 900 V - 3.1V @ 15V, 38A - 117 A PT - 162 nC 193 A 18ns/131ns 1192µJ (on), 1088µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm No -
                                    APT64GA90LD30
                                    APT64GA90LD30

                                    536-372-APT64GA90LD30 Microchip Technology
                                    RoHS :
                                    Package : -
                                    In Stock : 8
                                    1 : -
                                    Microchip Technology APT50GN120L2DQ2G
                                    Mfr. Part #
                                    APT50GN120L2DQ2G
                                    Elecinsight Part #
                                    536-372-APT50GN120L2DQ2G
                                    IN STOCK: 29
                                    Microchip Technology
                                    IGBT Transistors FG
                                    Datasheet Compare
                                      Min.:1
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                                      - - Through Hole TO-264-3 - - - - - - APT50GN120 1.2 kV - 1.7 V 134 A 134 A 134 A 1 600 nA - - - 20 V, + 20 V + 150 C Microchip Technology - 55 C Through Hole - - Tube - - - - - - 543 W Active - - Details - - 800V, 50A, 2.2Ohm, 15V - - - 0.373904 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - Single - 543 - Standard 543 W - - - - - 55 C to + 150 C - - 1200 V - 2.1V @ 15V, 50A - 134 A NPT, Trench Field Stop - 315 nC 150 A 28ns/320ns 4495µJ (off) - - - 5.21 mm 26.49 mm 20.5 mm - -
                                      APT50GN120L2DQ2G
                                      APT50GN120L2DQ2G

                                      536-372-APT50GN120L2DQ2G Microchip Technology
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                                      In Stock : 29
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                                      Microchip Technology APT64GA90B2D30
                                      Mfr. Part #
                                      APT64GA90B2D30
                                      Elecinsight Part #
                                      536-372-APT64GA90B2D30
                                      IN STOCK: 10
                                      Microchip Technology
                                      IGBT Transistors FG
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                                        Production (Last Updated: 2 months ago) Through Hole Through Hole TO-247-3 Variant - - - - - - APT64GA90 - 900 V 2.5 - - 117 A 1 - - - - 20 V, + 20 V - Microchip Technology - - - - Tube - - - - - - - Active - - Details - - 600V, 38A, 4.7Ohm, 15V - - - 0.283029 oz - -55°C ~ 150°C (TJ) Tube POWER MOS 8™ - - - - 150 °C -55 °C - 500 W - - - - - - - - - Single 500 - Standard 500 W - - 900 V 117 A - - - 900 V - 3.1V @ 15V, 38A - 117 PT - 162 nC 193 A 18ns/131ns 1192µJ (on), 1088µJ (off) - - - - - - No -
                                        APT64GA90B2D30
                                        APT64GA90B2D30

                                        536-372-APT64GA90B2D30 Microchip Technology
                                        RoHS :
                                        Package : -
                                        In Stock : 10
                                        1 : -
                                        Microchip Technology APT25GN120B2DQ2G
                                        Mfr. Part #
                                        APT25GN120B2DQ2G
                                        Elecinsight Part #
                                        536-372-APT25GN120B2DQ2G
                                        Microchip Technology
                                        IGBT Transistors FG
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          - - Through Hole TO-247-3 Variant - - - - - - APT25GN120 - - 1.7 - - 67 A 1 - - - - 30 V, + 30 V - Microchip Technology - - - - Tube - - - - - - - Active - - Details - - 800V, 25A, 4.3Ohm, 15V - - - 0.208116 oz - -55°C ~ 150°C (TJ) Tube - - - - - - - - - - - - - - - - - - - 272 - Standard 272 W - - - - - - - 1200 V - 2.1V @ 15V, 25A - 67 NPT, Trench Field Stop - 155 nC 75 A 22ns/280ns 2.15µJ (off) - - - - - - - -
                                          APT25GN120B2DQ2G
                                          APT25GN120B2DQ2G

                                          536-372-APT25GN120B2DQ2G Microchip Technology
                                          RoHS :
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: APT40GT60BRG,APT15GP60BDQ1G,APT35GP120BG,APT75GN60LDQ3G,APT65GP60B2G.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 180 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.
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