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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Body material | Number of Terminals | Transistor Element Material | Exterior Housing Material | Additional functions | Button and head shape | Case | Dielectric strength | Drain Current-Max (ID) | Gross weight | Ihs Manufacturer | Kind of integrated circuit | Kind of package | Moisture Sensitivity Levels | Mounting | Mounting diameter | Nominal power | Number of Elements | Number of switching cycles (electrical) | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Protection class | Relative humidity | Rohs Code | Soldering temperature | Switching scheme | Transport packaging size/quantity | Type of integrated circuit | Operating temperature | ECCN Code | Terminal Position | Terminal Form | Reach Compliance Code | Frequency | Pin Count | JESD-30 Code | Qualification Status | Contact resistance | Configuration | Insulation resistance | Voltage | Speed | Operating Mode | Output current | Case Connection | Switch type | Transistor Application | Polarity/Channel Type | Operating temperature range | Rated current | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Feedback Cap-Max (Crss) | Highest Frequency Band | Power Gain-Min (Gp) | Contacts | Frequency (Hz) | Diameter |
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  | Mfr. Part #3SK298Elecinsight Part #3639-375-3SK298 | Hitachi Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
Datasheet
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| Min.:1 Mult.:1 | YES | nickel-plated brass | 4 | SILICON | 1 | - | ring - cone; button - dome | MSOP8 | 2000 (50 Hz/1 min) V | 0.025 A | 1 g | HITACHI LTD | PWM controller | reel, | - | SMD | 19 mm | - | - | ≥200000 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | IP65 | 45...85 % | - | - | OFF-ON with latching | 62*27.5*28/500 | PMIC | 0...70°C | EAR99 | DUAL | GULL WING | unknown | 0.5MHz | 4 | R-PDSO-G4 | Not Qualified | ≤50 mOhm | SINGLE | ≥1000 MOhm | - | - | DUAL GATE, DEPLETION MODE | 1A | SOURCE | GQ19 series vandal-resistant shortened button without backlight | AMPLIFIER | N-CHANNEL | -25…+55 °C | 2 A | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.1 W | 0.04 pF | ULTRA HIGH FREQUENCY BAND | 12 dB | 2S (screw) | - | 22 mm | ||
| 3SK298 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #2SJ548Elecinsight Part #3639-375-2SJ548
IN STOCK: 28000
| Hitachi Ltd |
Power Field-Effect Transistor, 0.155ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | - | 1 | Temperature, speed, and air flow adjustment | - | - | - | 15 A | 6500.00 | HITACHI LTD | - | - | - | - | - | 200 W | - | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FM | - | - | No | 170...190 °C | - | 42*28*27/1 | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | 220 V | up to 12 m/min | - | - | ISOLATED | - | - | P-CHANNEL | - | - | - | 0.155 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 30 W | - | - | - | - | 60 | - | ||
| 2SJ548 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #2SK1809Elecinsight Part #3639-375-2SK1809 | Hitachi Ltd |
Power Field-Effect Transistor, 1.5ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | - | - | - | - | - | - | 5 A | - | HITACHI LTD | - | - | 1 | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | Yes | - | - | - | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | TO-220AB | 1.5 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 60 W | - | - | - | - | - | - | ||
| 2SK1809 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK2796SElecinsight Part #3639-375-2SK2796S | Hitachi Ltd |
Description: 0.25ohm, POWER, FET
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 2 | - | - | - | - | - | - | - | - | HITACHI LTD | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | - | SINGLE | GULL WING | unknown | - | - | R-PSSO-G2 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.25 Ω | - | - | - | - | - | - | - | - | - | - | ||
| 2SK2796S | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK3207Elecinsight Part #3639-375-2SK3207 | Hitachi Ltd |
Description: Power Field-Effect Transistor, 0.12ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | - | - | - | - | - | - | 18 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FM | - | - | - | - | - | - | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | - | - | - | ISOLATED | - | - | N-CHANNEL | - | - | - | 0.12 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | - | - | - | ||
| 2SK3207 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PM5050JElecinsight Part #3639-375-PM5050J | Hitachi Ltd |
Power Field-Effect Transistor, 0.18ohm, 1-Element, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 8 | - | - | - | - | - | - | 50 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | UPPER | UNSPECIFIED | unknown | - | - | R-XUFM-X8 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.18 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 250 W | - | - | - | - | - | - | ||
| PM5050J | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK439-FElecinsight Part #3639-375-2SK439-F
IN STOCK: 4365
| Hitachi Ltd |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | - | 0.03 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | IN-LINE, R-PSIP-W3 | RECTANGULAR | IN-LINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | SINGLE | WIRE | unknown | - | - | R-PSIP-W3 | Not Qualified | - | SINGLE | - | - | - | DEPLETION MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 0.3 W | - | VERY HIGH FREQUENCY BAND | - | - | - | - | ||
| 2SK439-F | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK2113YY-TLElecinsight Part #3639-375-2SK2113YY-TL | Hitachi Ltd |
RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel
Datasheet
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| Min.:1 Mult.:1 | YES | - | 3 | GALLIUM ARSENIDE | - | - | - | - | - | 0.06 A | - | HITACHI LTD | - | - | - | - | - | - | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | DUAL | GULL WING | unknown | - | - | R-PDSO-G3 | Not Qualified | - | - | - | - | - | - | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 3.5 V | - | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | ||
| 2SK2113YY-TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #3SK233XWElecinsight Part #3639-375-3SK233XW
IN STOCK: 21000
| Hitachi Ltd |
Small Signal Field-Effect Transistor, 0.035A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 4 | SILICON | - | - | - | - | - | 0.035 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G4 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | DUAL | GULL WING | unknown | - | - | R-PDSO-G4 | Not Qualified | - | SINGLE | - | - | - | ENHANCEMENT MODE | - | - | - | AMPLIFIER | N-CHANNEL | - | - | - | - | - | 12 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| 3SK233XW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PM4550CElecinsight Part #3639-375-PM4550C | Hitachi Ltd |
Transistor
Datasheet
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| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | HITACHI LTD | - | - | - | - | - | - | - | - | - | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | EAR99 | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| PM4550C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK580LElecinsight Part #3639-375-2SK580L | Hitachi Ltd |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | - | - | - | - | - | - | - | - | 1.5 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | - | , | - | - | Obsolete | - | - | - | - | - | - | - | - | - | EAR99 | - | - | unknown | - | - | - | - | - | SINGLE | - | - | - | ENHANCEMENT MODE | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | METAL-OXIDE SEMICONDUCTOR | 20 W | - | - | - | - | - | - | ||
| 2SK580L | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK3154Elecinsight Part #3639-375-2SK3154
IN STOCK: 10838
| Hitachi Ltd |
Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | SILICON | - | - | - | - | - | 15 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220AB | - | - | - | - | - | - | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | TO-220AB | 0.15 Ω | 60 A | 150 V | METAL-OXIDE SEMICONDUCTOR | 50 W | - | - | - | - | - | - | ||
| 2SK3154 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #HAT3008RJElecinsight Part #3639-375-HAT3008RJ | Hitachi Ltd |
Description: Power Field-Effect Transistor, 5A I(D), 60V, 0.084ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 8 | SILICON | - | - | - | - | - | 5 A | - | HITACHI LTD | - | - | - | - | - | - | 2 | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G8 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | - | - | - | - | - | - | - | - | EAR99 | DUAL | GULL WING | unknown | - | 8 | R-PDSO-G8 | Not Qualified | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL AND P-CHANNEL | - | - | MS-012AA | 0.084 Ω | 40 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 3 W | - | - | - | - | - | - | ||
| HAT3008RJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK2426Elecinsight Part #3639-375-2SK2426
IN STOCK: 4
| Hitachi Ltd |
Description: Power Field-Effect Transistor, 0.35ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220CFM, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | - | - | - | - | - | - | 12 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220CF | - | - | - | - | - | - | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | 0.35 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | - | - | - | ||
| 2SK2426 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SJ363PYElecinsight Part #3639-375-2SJ363PY | Hitachi Ltd |
Power Field-Effect Transistor, 2A I(D), 30V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | YES | - | 3 | SILICON | - | - | - | - | - | 2 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | SINGLE | FLAT | unknown | - | - | R-PSSO-F3 | Not Qualified | - | SINGLE | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | - | 0.75 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| 2SJ363PY | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PM50150KElecinsight Part #3639-375-PM50150K | Hitachi Ltd |
Power Field-Effect Transistor, 0.08ohm, 1-Element, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | NO | - | 8 | - | - | - | - | - | - | 150 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | UNSPECIFIED | FLANGE MOUNT, R-XUFM-X8 | RECTANGULAR | FLANGE MOUNT | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | UPPER | UNSPECIFIED | unknown | - | - | R-XUFM-X8 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 0.08 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 500 W | - | - | - | - | - | - | ||
| PM50150K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #H7N0312LMElecinsight Part #3639-375-H7N0312LM | Hitachi Ltd |
Power Field-Effect Transistor, 85A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 2 | SILICON | - | - | - | - | - | 85 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | SINGLE | GULL WING | unknown | - | 3 | R-PSSO-G2 | Not Qualified | - | SINGLE WITH BUILT-IN DIODE | - | - | - | ENHANCEMENT MODE | - | DRAIN | - | SWITCHING | N-CHANNEL | - | - | - | 0.0058 Ω | 340 A | 30 V | METAL-OXIDE SEMICONDUCTOR | 125 W | - | - | - | - | - | - | ||
| H7N0312LM | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #2SK1863Elecinsight Part #3639-375-2SK1863
IN STOCK: 500
| Hitachi Ltd |
Power Field-Effect Transistor, 3ohm, N-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN
Datasheet
Compare
| Min.:1 Mult.:1 | NO | - | 3 | - | - | - | - | - | - | 3 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FM | - | - | - | - | - | - | - | - | EAR99 | SINGLE | THROUGH-HOLE | unknown | - | 3 | R-PSFM-T3 | Not Qualified | - | SINGLE | - | - | - | - | - | ISOLATED | - | - | N-CHANNEL | - | - | - | 3 Ω | - | - | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | - | - | - | ||
| 2SK1863 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SK1772HYTLElecinsight Part #3639-375-2SK1772HYTL | Hitachi Ltd |
Description: Power Field-Effect Transistor, 1A I(D), 30V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | - | - | - | - | - | 1 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | SINGLE | FLAT | unknown | - | - | R-PSSO-F3 | Not Qualified | - | SINGLE | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | N-CHANNEL | - | - | - | 0.85 Ω | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| 2SK1772HYTL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #2SJ186CYTRElecinsight Part #3639-375-2SJ186CYTR | Hitachi Ltd |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
Compare
| Min.:1 Mult.:1 | YES | - | 3 | SILICON | - | - | - | - | - | 0.5 A | - | HITACHI LTD | - | - | - | - | - | - | 1 | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Transferred | - | - | - | - | - | - | - | - | - | EAR99 | SINGLE | FLAT | unknown | - | - | R-PSSO-F3 | Not Qualified | - | SINGLE | - | - | - | ENHANCEMENT MODE | - | - | - | SWITCHING | P-CHANNEL | - | - | - | 12 Ω | - | 200 V | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | ||
| 2SJ186CYTR |
Index :
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