- All Products
- /
- Discrete Semiconductor Products
- /
- Transistors - Special Purpose
| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Moisture Sensitivity Levels | Number of Elements | Operating Temperature-Max | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | Pbfree Code | ECCN Code | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Highest Frequency Band | Profile | Power Dissipation Ambient-Max | Power Gain-Min (Gp) | Plating thickness | Flammability rating |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
  | Mfr. Part #RD06HVF1Elecinsight Part #539-375-RD06HVF1
IN STOCK: 50
| Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | 3 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | No | - | - | - | - | Yes | EAR99 | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | R-PSFM-T3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 50 V | METAL-OXIDE SEMICONDUCTOR | 27.8 W | - | VERY HIGH FREQUENCY BAND | - | - | - | - | - | ||
| RD06HVF1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGF4914EElecinsight Part #539-375-MGF4914E | Mitsubishi Electric |
RF Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | 0.06 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 125 °C | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Obsolete | - | - | - | - | - | - | - | EAR99 | LOW NOISE | 8541.21.00.95 | RADIAL | FLAT | - | unknown | - | - | 4 | O-CRDB-F4 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | HIGH ELECTRON MOBILITY | - | - | K BAND | - | 0.05 W | 9.5 dB | - | - | ||
| MGF4914E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFC47B3538BElecinsight Part #539-375-MGFC47B3538B | Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | 3 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | 175 °C | - | , | - | - | Obsolete | - | - | - | - | - | - | - | EAR99 | - | 8541.29.00.95 | - | - | - | unknown | - | - | - | - | - | - | - | - | - | N-CHANNEL | - | - | - | - | - | - | - | - | 115 W | - | - | - | ||
| MGFC47B3538B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FS10KM-9Elecinsight Part #539-375-FS10KM-9
IN STOCK: 299
| Mitsubishi Electric |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | 10 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | 0.73 Ω | 30 A | 450 V | METAL-OXIDE SEMICONDUCTOR | 35 W | - | - | - | - | - | - | - | ||
| FS10KM-9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFX39V0717Elecinsight Part #539-375-MGFX39V0717 | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 2.4 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 10 V | JUNCTION | - | - | X BAND | - | 43 W | - | - | - | ||
| MGFX39V0717 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #FS50KMJ-03FElecinsight Part #539-375-FS50KMJ-03F | Mitsubishi Electric |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | 50 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Transferred | TO-220FN | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | 3 | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.019 Ω | 200 A | 30 V | METAL-OXIDE SEMICONDUCTOR | 25 W | - | - | - | - | - | - | - | ||
| FS50KMJ-03F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD02MUS1BElecinsight Part #539-375-RD02MUS1B | Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | gold-plated | YES | 90 | 3 | SILICON | 1 | socket | 2x45 | 2.54mm | - | 1.5 A | THT | 4.05 g | MITSUBISHI ELECTRIC CORP | female | - | - | - | UNSPECIFIED | CHIP CARRIER, R-XQCC-N3 | RECTANGULAR | CHIP CARRIER | Obsolete | - | - | 2.54mm | straight | pin strips | -40...163°C | - | EAR99 | - | - | QUAD | NO LEAD | - | unknown | 1.5A | - | 10 | R-XQCC-N3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | - | 60V | ULTRA HIGH FREQUENCY BAND | beryllium copper | - | - | 0.254µm | UL94V-0 | ||
| RD02MUS1B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD02LUS2-T513Elecinsight Part #539-375-RD02LUS2-T513
IN STOCK: 30000
| Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | - | - | - | EAR99 | - | - | - | - | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RD02LUS2-T513 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD01MUS1-101Elecinsight Part #539-375-RD01MUS1-101 | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | 0.6 A | - | - | MITSUBISHI ELECTRIC CORP | - | 1 | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | - | - | - | Yes | EAR99 | - | - | SINGLE | FLAT | 225 | unknown | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | ENHANCEMENT MODE | - | AMPLIFIER | N-CHANNEL | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 3.6 W | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| RD01MUS1-101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD70HHF1Elecinsight Part #539-375-RD70HHF1
IN STOCK: 10000
| Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | SILICON | - | - | - | - | - | 20 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | DUAL | FLAT | - | unknown | - | - | - | R-CDFM-F2 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 50 V | METAL-OXIDE SEMICONDUCTOR | 150 W | - | HIGH FREQUENCY BAND | - | - | - | - | - | ||
| RD70HHF1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGF0906BElecinsight Part #539-375-MGF0906B
IN STOCK: 2500
| Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 1.2 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 10 V | JUNCTION | - | - | S BAND | - | 23 W | 10 dB | - | - | ||
| MGF0906B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD70HUP2Elecinsight Part #539-375-RD70HUP2
IN STOCK: 19080
| Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | MITSUBISHI ELECTRIC CORP | - | - | - | - | - | , | - | - | Active | - | Yes | - | - | - | - | - | EAR99 | - | - | - | - | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| RD70HUP2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFC47B3436BElecinsight Part #539-375-MGFC47B3436B
IN STOCK: 500
| Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 1.5 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | - | 3 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 12 V | JUNCTION | - | - | S BAND | - | 115 W | - | - | - | ||
| MGFC47B3436B | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FS12KMA-4AElecinsight Part #539-375-FS12KMA-4A | Mitsubishi Electric |
Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | NO | - | 3 | SILICON | - | - | - | - | - | 12 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | THROUGH-HOLE | - | unknown | - | - | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | 0.4 Ω | 36 A | 200 V | METAL-OXIDE SEMICONDUCTOR | 32 W | - | - | - | - | - | - | - | ||
| FS12KMA-4A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFK33V4045Elecinsight Part #539-375-MGFK33V4045 | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 0.7 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | HIGH RELIABILITY | 8541.29.00.95 | DUAL | FLAT | - | unknown | - | - | 3 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 8 V | JUNCTION | - | - | KU BAND | - | 17 W | - | - | - | ||
| MGFK33V4045 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGF1923-01Elecinsight Part #539-375-MGF1923-01
IN STOCK: 8387
| Mitsubishi Electric |
RF Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 4 | GALLIUM ARSENIDE | - | - | - | - | - | 0.08 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Obsolete | - | - | - | - | - | - | - | EAR99 | LOW NOISE | - | RADIAL | FLAT | - | unknown | - | - | - | O-CRDB-F4 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | METAL SEMICONDUCTOR | - | - | KU BAND | - | - | 11.7 dB | - | - | ||
| MGF1923-01 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFC45V4450AElecinsight Part #539-375-MGFC45V4450A | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 8 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | HIGH RELIABILITY | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 10 V | JUNCTION | - | - | C BAND | - | 150 W | - | - | - | ||
| MGFC45V4450A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #MGFC36V4450A-51Elecinsight Part #539-375-MGFC36V4450A-51 | Mitsubishi Electric |
Description: RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 2 | GALLIUM ARSENIDE | - | - | - | - | - | 3.75 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 175 °C | CERAMIC, METAL-SEALED COFIRED | FLANGE MOUNT, R-CDFM-F2 | RECTANGULAR | FLANGE MOUNT | Obsolete | - | - | - | - | - | - | - | EAR99 | - | 8541.29.00.75 | DUAL | FLAT | - | unknown | - | - | 2 | R-CDFM-F2 | Not Qualified | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | JUNCTION | - | - | C BAND | - | 25 W | 9 dB | - | - | ||
| MGFC36V4450A-51 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD07MUS2B-T512Elecinsight Part #539-375-RD07MUS2B-T512
IN STOCK: 48000
| Mitsubishi Electric |
RF Power Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | 2019-06-27 | 3 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | UNSPECIFIED | , | RECTANGULAR | FLATPACK | Active | - | - | - | - | - | - | - | EAR99 | - | - | QUAD | NO LEAD | - | unknown | - | - | - | R-XQFP-N3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 25 V | METAL-OXIDE SEMICONDUCTOR | - | - | ULTRA HIGH FREQUENCY BAND | - | - | - | - | - | ||
| RD07MUS2B-T512 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #RD00HVS1Elecinsight Part #539-375-RD00HVS1
IN STOCK: 3000
| Mitsubishi Electric |
RF Small Signal Field-Effect Transistor
Datasheet
Compare
| Min.:1 Mult.:1 | - | YES | - | 3 | SILICON | - | - | - | - | - | 0.2 A | - | - | MITSUBISHI ELECTRIC CORP | - | - | 1 | 150 °C | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-F3 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | - | - | - | - | EAR99 | - | - | SINGLE | FLAT | - | unknown | - | - | 3 | R-PSSO-F3 | Not Qualified | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | 30 V | METAL-OXIDE SEMICONDUCTOR | 0.8 W | - | ULTRA HIGH FREQUENCY BAND | - | - | 20 dB | - | - | ||
| RD00HVS1 |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ