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| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Factory Lead Time | Contact plating | Surface Mount | Number of pins | Number of Terminals | Transistor Element Material | Exterior Housing Material | Connector | Connector pinout layout | Contacts pitch | Date Of Intro | Drain Current-Max (ID) | Electrical mounting | Gross weight | Ihs Manufacturer | Kind of connector | Manufacturer Package Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Description | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Row pitch | Spatial orientation | Type of connector | Operating temperature | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Reach Compliance Code | Current rating | Time@Peak Reflow Temperature-Max (s) | Pin Count | Reference Standard | JESD-30 Code | Qualification Status | Configuration | Operating Mode | Case Connection | Transistor Application | Polarity/Channel Type | JEDEC-95 Code | Drain-source On Resistance-Max | Pulsed Drain Current-Max (IDM) | DS Breakdown Voltage-Min | Avalanche Energy Rating (Eas) | FET Technology | Power Dissipation-Max (Abs) | Rated voltage | Feedback Cap-Max (Crss) | Highest Frequency Band | Profile | Saturation Current | Plating thickness | Flammability rating |
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  | Mfr. Part #TK11S10N1LElecinsight Part #4669-375-TK11S10N1L
IN STOCK: 35000
| Toshiba America Electronic Components |
POWER, FET
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 84 | 2 | SILICON | 1 | socket | 2x42 | 2.54mm | - | 11 A | THT | 5.04 g | TOSHIBA CORP | female | - | 175 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PSSO-G2 | RECTANGULAR | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | SINGLE | GULL WING | - | unknown | 1.5A | - | - | AEC-Q101 | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.05 Ω | 33 A | 100 V | 33.8 mJ | METAL-OXIDE SEMICONDUCTOR | 65 W | 60V | 67 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TK11S10N1L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPH3R506PLElecinsight Part #4669-375-TPH3R506PL
IN STOCK: 1520
| Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 74 | 8 | SILICON | 1 | socket | 2x37 | 2.54mm | - | 94 A | THT | 4.44 g | TOSHIBA CORP | female | - | 175 °C | - | PLASTIC/EPOXY | , | SQUARE | SMALL OUTLINE | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0035 Ω | 200 A | 60 V | 48 mJ | METAL-OXIDE SEMICONDUCTOR | 116 W | 60V | 95 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPH3R506PL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK7A60W5Elecinsight Part #4669-375-TK7A60W5
IN STOCK: 3
| Toshiba America Electronic Components |
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V
Datasheet
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| Min.:1 Mult.:1 | 32 Weeks | gold-plated | NO | 66 | 3 | SILICON | 1 | socket | 2x33 | 2.54mm | - | 7 A | THT | 3.96 g | TOSHIBA CORP | female | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | - | - | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.65 Ω | 28 A | 600 V | 92 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TK7A60W5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMPB13XNEElecinsight Part #17568-375-PMPB13XNE
IN STOCK: 108000
| NXP Semiconductors |
8A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 38 | 6 | SILICON | 1 | socket | 2x19 | 2.54mm | - | 8 A | THT | 2.28 g | NXP SEMICONDUCTORS | female | - | - | - | PLASTIC/EPOXY | 2 X 2 MM, 0.65 MM HEIGHT, LEADLESS, ULTRA THIN, PLASTIC, DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Transferred | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | - | DUAL | NO LEAD | - | unknown | 1.5A | - | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.016 Ω | 32 A | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| PMPB13XNE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #IPD80R450P7Elecinsight Part #376-375-IPD80R450P7
IN STOCK: 10000
| Infineon Technologies AG |
Power Field-Effect Transistor,
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | - | 23 | - | - | - | socket | 1x23 | 2.54mm | - | - | THT | 1.15 g | INFINEON TECHNOLOGIES AG | female | - | - | - | - | , | - | - | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | Tin (Sn) | - | - | - | - | NOT SPECIFIED | compliant | 3A | NOT SPECIFIED | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 150V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| IPD80R450P7 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7Y12-100EElecinsight Part #554-375-BUK7Y12-100E | Nexperia |
Power Field-Effect Transistor, 85A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 20 | 4 | SILICON | 1 | socket | 2x10 | 2.54mm | - | 85 A | THT | 1.07 g | NEXPERIA | female | - | - | - | PLASTIC/EPOXY | SO8, LFPAK56-4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | AVALANCHE RATED | - | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | MO-235 | 0.012 Ω | 339 A | 100 V | 139 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.254µm | UL94V-0 | ||
| BUK7Y12-100E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TK750A60FElecinsight Part #4669-375-TK750A60F
IN STOCK: 50000
| Toshiba America Electronic Components |
Description: Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | NO | 12 | 3 | SILICON | 1 | socket | 2x6 | 2.54mm | - | 10 A | THT | 0.64 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | FLANGE MOUNT | Active | - | Yes | 2.54mm | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PSFM-T3 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.75 Ω | 40 A | 600 V | 201 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | 60V | 8.5 pF | - | beryllium copper | - | 0.254µm | UL94V-0 | ||
| TK750A60F | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BLP0427M9S20GElecinsight Part #38-375-BLP0427M9S20G
IN STOCK: 170
| Ampleon |
Description: RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET,
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 40 | 2 | SILICON | 1 | socket | 1x40 | 2.54mm | - | - | THT | 2.32 g | AMPLEON NETHERLANDS B V | female | - | 225 °C | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G2 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | GULL WING | - | unknown | 1.5A | - | - | IEC-60134 | R-PDSO-G2 | - | SINGLE | ENHANCEMENT MODE | SOURCE | AMPLIFIER | N-CHANNEL | - | - | - | 65 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | S BAND | beryllium copper | - | 0.75µm | UL94V-0 | ||
| BLP0427M9S20G | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #BUK7K35-60EElecinsight Part #554-375-BUK7K35-60E
IN STOCK: 29500
| Nexperia |
Description: Power Field-Effect Transistor, 20.7A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 49 | 4 | SILICON | 2 | socket | 1x49 | 2.54mm | - | 20.7 A | THT | 2.84 g | NEXPERIA | female | - | - | - | PLASTIC/EPOXY | LFPAK56D-4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | AVALANCHE RATED | - | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | AEC-Q101; IEC-60134 | R-PSSO-G4 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.03 Ω | 95 A | 60 V | 20.3 mJ | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| BUK7K35-60E | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #18NM70G-TN3-RElecinsight Part #15973-375-18NM70G-TN3-R
IN STOCK: 3013
| Unisonic Technologies Co Ltd |
Description: Power Field-Effect Transistor,
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 40 | 2 | SILICON | 1 | socket | 1x40 | 2.54mm | - | 18 A | THT | 2.32 g | UNISONIC TECHNOLOGIES CO LTD | female | - | 150 °C | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | SINGLE | GULL WING | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | - | - | R-PSSO-G2 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-252 | 0.35 Ω | 45 A | 700 V | 204.8 mJ | METAL-OXIDE SEMICONDUCTOR | 83 W | 60V | 71 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| 18NM70G-TN3-R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PMPB20XPEElecinsight Part #554-375-PMPB20XPE
IN STOCK: 12000
| Nexperia |
Power Field-Effect Transistor, 7.2A I(D), 20V, 0.0235ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 21 | 6 | SILICON | 1 | socket | 1x21 | 2.54mm | - | 7.2 A | THT | 1.22 g | NEXPERIA | female | - | - | - | PLASTIC/EPOXY | DFN2020MD-6, 6 PIN | SQUARE | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | - | - | DUAL | NO LEAD | 260 | compliant | 1.5A | 30 | - | IEC-60134 | S-PDSO-N6 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | P-CHANNEL | - | 0.0235 Ω | 30 A | 20 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | - | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| PMPB20XPE | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #TPN4R806PLElecinsight Part #4669-375-TPN4R806PL | Toshiba America Electronic Components |
Small Signal Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | 16 Weeks | gold-plated | YES | 1 | 8 | SILICON | 1 | socket | 1x1 | 2.54mm | - | 105 A | THT | 0.1 g | TOSHIBA CORP | female | - | 175 °C | - | PLASTIC/EPOXY | - | SQUARE | SMALL OUTLINE | Active | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | FLAT | - | unknown | 1.5A | - | - | - | S-PDSO-F8 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | - | 0.0048 Ω | 200 A | 60 V | 28 mJ | METAL-OXIDE SEMICONDUCTOR | 104 W | 60V | 90 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TPN4R806PL | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #TK12A60UElecinsight Part #4669-375-TK12A60U
IN STOCK: 1950
| Toshiba America Electronic Components |
TRANSISTOR 12 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | NO | 45 | 3 | SILICON | 1 | socket | 1x45 | 2.54mm | - | 12 A | THT | 3.87 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | End Of Life | SC-67 | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | - | unknown | 1.5A | - | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | ISOLATED | SWITCHING | N-CHANNEL | - | 0.4 Ω | 24 A | 600 V | 69 mJ | METAL-OXIDE SEMICONDUCTOR | 35 W | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| TK12A60U | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PJ4N3KDWElecinsight Part #17593-375-PJ4N3KDW
IN STOCK: 84000
| PanJit Semiconductor |
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 36 | 6 | SILICON | 2 | socket | 1x36 | 2.54mm | - | 0.1 A | THT | 3.42 g | PAN JIT INTERNATIONAL INC | female | - | - | - | PLASTIC/EPOXY | SMALL OUTLINE, R-PDSO-G6 | RECTANGULAR | SMALL OUTLINE | Not Recommended | - | Yes | - | straight | pin strips | -40...163°C | - | Yes | EAR99 | - | ULTRA-LOW RESISTANCE | - | DUAL | GULL WING | - | compliant | 1.5A | - | 6 | - | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 5 Ω | - | 30 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | 5 pF | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| PJ4N3KDW | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #PSMN6R9-100YSFElecinsight Part #554-375-PSMN6R9-100YSF
IN STOCK: 2600
| Nexperia |
Power Field-Effect Transistor
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 43 | 4 | SILICON | 1 | socket | 1x43 | 2.54mm | 2017-12-08 | 90 A | THT | 3.7 g | NEXPERIA | female | - | 175 °C | -55 °C | PLASTIC/EPOXY | SOT-669, SOP-8, 4 PIN | RECTANGULAR | SMALL OUTLINE | Obsolete | - | Yes | - | straight | pin strips | -40...163°C | e3 | - | EAR99 | TIN | AVALANCHE RATED | - | SINGLE | GULL WING | 260 | not_compliant | 1.5A | 30 | - | IEC-60134 | R-PSSO-G4 | - | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | DRAIN | SWITCHING | N-CHANNEL | MO-235 | 0.0102 Ω | 360 A | 100 V | 321 mJ | METAL-OXIDE SEMICONDUCTOR | 238 W | 60V | 19 pF | - | beryllium copper | 1 | 0.75µm | UL94V-0 | ||
| PSMN6R9-100YSF | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #FHC40LGElecinsight Part #293-375-FHC40LG
IN STOCK: 12
| FUJITSU Semiconductor Limited |
RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 14 | 4 | - | - | socket | 1x14 | 2.54mm | - | - | THT | 1.2 g | FUJITSU SEMICONDUCTOR AMERICA INC | female | CASE LG | - | - | CERAMIC, METAL-SEALED COFIRED | DISK BUTTON, O-CRDB-F4 | ROUND | DISK BUTTON | Transferred | - | - | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | 8541.21.00.75 | RADIAL | FLAT | - | unknown | 1.5A | - | 4 | - | O-CRDB-F4 | Not Qualified | - | - | - | - | - | - | - | - | - | - | - | - | 60V | - | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| FHC40LG | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM3K7002KFUElecinsight Part #4669-375-SSM3K7002KFU
IN STOCK: 850
| Toshiba America Electronic Components |
SMALL SIGNAL, FET
Datasheet
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| Min.:1 Mult.:1 | 36 Weeks | - | YES | - | 3 | SILICON | 1 | - | - | - | 2016-02-12 | 0.4 A | - | - | TOSHIBA CORP | - | - | - | - | PLASTIC/EPOXY | - | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | - | - | - | - | - | EAR99 | - | - | - | DUAL | GULL WING | NOT SPECIFIED | unknown | - | NOT SPECIFIED | - | - | R-PDSO-G3 | - | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 1.75 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| SSM3K7002KFU | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | Mfr. Part #9N90G-T47-TElecinsight Part #15973-375-9N90G-T47-T
IN STOCK: 2345
| Unisonic Technologies Co Ltd |
Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, HALOGEN FREE PACKAGE-3
Datasheet
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| Min.:1 Mult.:1 | - | - | NO | - | 3 | SILICON | 1 | - | - | - | - | 9 A | - | - | UNISONIC TECHNOLOGIES CO LTD | - | - | - | - | PLASTIC/EPOXY | FLANGE MOUNT, R-PSFM-T3 | RECTANGULAR | FLANGE MOUNT | Active | TO-247 | Yes | - | - | - | - | - | - | EAR99 | - | - | - | SINGLE | THROUGH-HOLE | NOT SPECIFIED | compliant | - | NOT SPECIFIED | 3 | - | R-PSFM-T3 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | TO-247 | 1.4 Ω | 36 A | 900 V | 900 mJ | METAL-OXIDE SEMICONDUCTOR | - | - | - | - | - | - | - | - | ||
| 9N90G-T47-T | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #UTF3055G-AA3-RElecinsight Part #15973-375-UTF3055G-AA3-R
IN STOCK: 5000
| Unisonic Technologies Co Ltd |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-4
Datasheet
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| Min.:1 Mult.:1 | - | gold-plated | YES | 42 | 4 | SILICON | 1 | socket | 1x42 | 2.54mm | - | 3 A | THT | 3.24 g | UNISONIC TECHNOLOGIES CO LTD | female | - | - | - | PLASTIC/EPOXY | HALOGEN FREE PACKAGE-4 | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | GULL WING | NOT SPECIFIED | compliant | 1.5A | NOT SPECIFIED | 4 | - | R-PDSO-G4 | Not Qualified | SINGLE WITH BUILT-IN DIODE | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 0.11 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | - | 60V | 50 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| UTF3055G-AA3-R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr. Part #SSM6N7002CFUElecinsight Part #4669-375-SSM6N7002CFU
IN STOCK: 1174
| Toshiba America Electronic Components |
Description: Small Signal MOS FET (Dual)
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| Min.:1 Mult.:1 | 20 Weeks | gold-plated | YES | 4 | 6 | SILICON | 2 | socket | 1x4 | 2.54mm | - | 0.17 A | THT | 0.31 g | TOSHIBA CORP | female | - | 150 °C | - | PLASTIC/EPOXY | , | RECTANGULAR | SMALL OUTLINE | Active | - | Yes | - | straight | pin strips | -40...163°C | - | - | EAR99 | - | - | - | DUAL | GULL WING | NOT SPECIFIED | unknown | 1.5A | NOT SPECIFIED | - | - | R-PDSO-G6 | - | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | ENHANCEMENT MODE | - | SWITCHING | N-CHANNEL | - | 4.7 Ω | - | 60 V | - | METAL-OXIDE SEMICONDUCTOR | 0.285 W | 60V | 0.7 pF | - | beryllium copper | - | 0.75µm | UL94V-0 | ||
| SSM6N7002CFU 4669-375-SSM6N7002CFU Toshiba America Electronic Components
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