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Image Part # Manufacturer Description Pricing Quantity RoHS Surface Mount Number of Terminals Access Time-Max Clock Frequency-Max (fCLK) Ihs Manufacturer Moisture Sensitivity Levels Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Rohs Code Supply Voltage-Nom (Vsup) JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Temperature Grade Supply Voltage-Min (Vsup) Number of Ports Operating Mode Supply Current-Max Organization Output Characteristics Seated Height-Max Memory Width Standby Current-Max Memory Density Parallel/Serial I/O Type Memory IC Type Standby Voltage-Min Refresh Cycles Sequential Burst Length Interleaved Burst Length Access Mode Reverse Pinout Self Refresh Length Width
Samsung Electronics Co. Ltd K4FBE3D4HM-GFCL03V
Mfr. Part #
K4FBE3D4HM-GFCL03V
Elecinsight Part #
700-535-K4FBE3D4HM-GFCL03V
IN STOCK: 3971
Samsung Electronics Co. Ltd
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    K4FBE3D4HM-GFCL03V
    K4FBE3D4HM-GFCL03V

    700-535-K4FBE3D4HM-GFCL03V Samsung Electronics Co. Ltd
    RoHS :
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    In Stock : 3971
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    Samsung Semiconductor KM684002BT-12
    Mfr. Part #
    KM684002BT-12
    Elecinsight Part #
    700-535-KM684002BT-12
    		Samsung Semiconductor
    Standard SRAM, 512KX8, 12ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, TSOP2-36
    Datasheet Compare
      Min.:1
      Mult.:1
      		 YES 36 12 ns - SAMSUNG SEMICONDUCTOR INC - 524288 words 512000 70 °C - PLASTIC/EPOXY TSOP TSOP, TSOP36,.46,40 TSOP36,.46,40 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 5 V e0 No 3A991.B.2.A TIN LEAD TTL COMPATIBLE INPUTS/OUTPUTS 8542.32.00.41 DUAL GULL WING - 1 1 mm unknown 36 R-PDSO-G36 Not Qualified 5.5 V COMMERCIAL 4.5 V - ASYNCHRONOUS 0.19 mA 512KX8 3-STATE 1.2 mm 8 0.01 A 4194304 bit PARALLEL COMMON STANDARD SRAM 4.5 V - - - - - - 18.41 mm 10.16 mm
      KM684002BT-12
      KM684002BT-12

      700-535-KM684002BT-12 Samsung Semiconductor
      RoHS :
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      Samsung Semiconductor K4D553238E-JC36
      Mfr. Part #
      K4D553238E-JC36
      Elecinsight Part #
      700-535-K4D553238E-JC36
      		Samsung Semiconductor
      Description: DDR DRAM, 8MX32, 0.6ns, CMOS, PBGA144, FBGA-144
      Datasheet Compare
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        Mult.:1
        		 YES 144 0.6 ns 275 MHz SAMSUNG SEMICONDUCTOR INC - 8388608 words 8000000 65 °C - PLASTIC/EPOXY LFBGA LFBGA, BGA144,12X12,32 BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH Obsolete BGA No 2.5 V e0 - EAR99 TIN LEAD AUTO/SELF REFRESH 8542.32.00.24 BOTTOM BALL - 1 0.8 mm compliant 144 S-PBGA-B144 Not Qualified 2.625 V COMMERCIAL 2.375 V 1 SYNCHRONOUS - 8MX32 3-STATE 1.4 mm 32 - 268435456 bit - COMMON GDDR1 DRAM - 4096 2,4,8 2,4,8 FOUR BANK PAGE BURST - YES 12 mm 12 mm
        K4D553238E-JC36
        K4D553238E-JC36

        700-535-K4D553238E-JC36 Samsung Semiconductor
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        Samsung Semiconductor K6E1004C1B-JC20
        Mfr. Part #
        K6E1004C1B-JC20
        Elecinsight Part #
        700-535-K6E1004C1B-JC20
        		Samsung Semiconductor
        Standard SRAM, 256KX4, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
        Datasheet Compare
          Min.:1
          Mult.:1
          		 YES 28 20 ns - SAMSUNG SEMICONDUCTOR INC - 262144 words 256000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ28,.44 SOJ28,.44 RECTANGULAR SMALL OUTLINE Obsolete SOJ No 5 V e0 - 3A991.B.2.B TIN LEAD TTL COMPATIBLE I/O 8542.32.00.41 DUAL J BEND - 1 1.27 mm compliant 28 R-PDSO-J28 Not Qualified 5.5 V COMMERCIAL 4.5 V - ASYNCHRONOUS 0.118 mA 256KX4 3-STATE 3.76 mm 4 0.005 A 1048576 bit PARALLEL COMMON STANDARD SRAM 4.5 V - - - - - - 18.42 mm 10.16 mm
          K6E1004C1B-JC20
          K6E1004C1B-JC20

          700-535-K6E1004C1B-JC20 Samsung Semiconductor
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          Samsung Semiconductor KM416V1004BJ-6
          Mfr. Part #
          KM416V1004BJ-6
          Elecinsight Part #
          700-535-KM416V1004BJ-6
          		Samsung Semiconductor
          EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
          Datasheet Compare
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            Mult.:1
            		 YES 42 60 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ42,.44 SOJ42,.44 RECTANGULAR SMALL OUTLINE Obsolete SOJ No 3.3 V e0 No EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL J BEND - 1 1.27 mm unknown 42 R-PDSO-J42 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.11 mA 1MX16 3-STATE 3.76 mm 16 0.001 A 16777216 bit - COMMON EDO DRAM - 4096 - - FAST PAGE WITH EDO - NO 27.31 mm 10.16 mm
            KM416V1004BJ-6
            KM416V1004BJ-6

            700-535-KM416V1004BJ-6 Samsung Semiconductor
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            Samsung Semiconductor K4S560832J-UC75T
            Mfr. Part #
            K4S560832J-UC75T
            Elecinsight Part #
            700-535-K4S560832J-UC75T
            		Samsung Semiconductor
            Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54
            Datasheet Compare
              Min.:1
              Mult.:1
              		 YES 54 5.4 ns 133 MHz SAMSUNG SEMICONDUCTOR INC 1 33554432 words 32000000 70 °C - PLASTIC/EPOXY TSOP TSOP, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - Yes 3.3 V e3 Yes EAR99 MATTE TIN - 8542.32.00.24 DUAL GULL WING - - 0.8 mm unknown - R-PDSO-G54 Not Qualified - COMMERCIAL - - - 0.11 mA 32MX8 3-STATE - 8 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 8192 1,2,4,8,FP 1,2,4,8 - - - - -
              K4S560832J-UC75T
              K4S560832J-UC75T

              700-535-K4S560832J-UC75T Samsung Semiconductor
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              Samsung Semiconductor KM684002BTI-10
              Mfr. Part #
              KM684002BTI-10
              Elecinsight Part #
              700-535-KM684002BTI-10
              		Samsung Semiconductor
              Standard SRAM, 512KX8, 10ns, CMOS, PDSO36, 0.400 INCH, PLASTIC, TSOP2-36
              Datasheet Compare
                Min.:1
                Mult.:1
                		 YES 36 10 ns - SAMSUNG SEMICONDUCTOR INC - 524288 words 512000 85 °C -40 °C PLASTIC/EPOXY TSOP TSOP, TSOP36,.46,40 TSOP36,.46,40 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 5 V e0 No 3A991.B.2.A TIN LEAD - 8542.32.00.41 DUAL GULL WING - 1 1 mm unknown 36 R-PDSO-G36 Not Qualified 5.5 V INDUSTRIAL 4.5 V - ASYNCHRONOUS 0.2 mA 512KX8 3-STATE 1.2 mm 8 0.01 A 4194304 bit PARALLEL COMMON STANDARD SRAM 4.5 V - - - - - - 18.41 mm 10.16 mm
                KM684002BTI-10
                KM684002BTI-10

                700-535-KM684002BTI-10 Samsung Semiconductor
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                Samsung Semiconductor KM416V1204AT-7
                Mfr. Part #
                KM416V1204AT-7
                Elecinsight Part #
                700-535-KM416V1204AT-7
                		Samsung Semiconductor
                EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
                Datasheet Compare
                  Min.:1
                  Mult.:1
                  		 YES 44 70 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44/50,.46,32 TSOP44/50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3.3 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 0.8 mm unknown 44 R-PDSO-G44 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.14 mA 1MX16 3-STATE 1.2 mm 16 0.001 A 16777216 bit - COMMON EDO DRAM - 1024 - - FAST PAGE WITH EDO - NO 18.41 mm 10.16 mm
                  KM416V1204AT-7
                  KM416V1204AT-7

                  700-535-KM416V1204AT-7 Samsung Semiconductor
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                  Samsung Semiconductor K4S563233F-HN60
                  Mfr. Part #
                  K4S563233F-HN60
                  Elecinsight Part #
                  700-535-K4S563233F-HN60
                  		Samsung Semiconductor
                  Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90
                  Datasheet Compare
                    Min.:1
                    Mult.:1
                    		 YES 90 5.4 ns 166 MHz SAMSUNG SEMICONDUCTOR INC - 8388608 words 8000000 85 °C -25 °C PLASTIC/EPOXY FBGA - BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Active - Yes - - - EAR99 - - 8542.32.00.24 BOTTOM BALL - - 0.8 mm compliant - R-PBGA-B90 Not Qualified - OTHER - - - 0.2 mA 8MX32 - - 32 0.0005 A 268435456 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 - - - - -
                    K4S563233F-HN60
                    K4S563233F-HN60

                    700-535-K4S563233F-HN60 Samsung Semiconductor
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                    Samsung Semiconductor K4H510438F-HCCC
                    Mfr. Part #
                    K4H510438F-HCCC
                    Elecinsight Part #
                    700-535-K4H510438F-HCCC
                    		Samsung Semiconductor
                    DDR DRAM, 128MX4, 0.65ns, CMOS, PBGA60,
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 YES 60 0.65 ns 200 MHz SAMSUNG SEMICONDUCTOR INC 3 134217728 words 128000000 70 °C - PLASTIC/EPOXY BGA - BGA60,9X12,40/32 RECTANGULAR GRID ARRAY Obsolete - Yes 2.6 V e1 Yes EAR99 TIN SILVER COPPER - 8542.32.00.28 BOTTOM BALL 260 - 0.8 mm unknown - R-PBGA-B60 Not Qualified - COMMERCIAL - - - 0.385 mA 128MX4 3-STATE - 4 0.005 A 536870912 bit - COMMON DDR1 DRAM - 8192 2,4,8 2,4,8 - - - - -
                      K4H510438F-HCCC
                      K4H510438F-HCCC

                      700-535-K4H510438F-HCCC Samsung Semiconductor
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                      Samsung Semiconductor K4B1G0846F-HYH9000
                      Mfr. Part #
                      K4B1G0846F-HYH9000
                      Elecinsight Part #
                      700-535-K4B1G0846F-HYH9000
                      		Samsung Semiconductor
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                        K4B1G0846F-HYH9000
                        K4B1G0846F-HYH9000

                        700-535-K4B1G0846F-HYH9000 Samsung Semiconductor
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                        Samsung Semiconductor K6T4008U1C-GF10
                        Mfr. Part #
                        K6T4008U1C-GF10
                        Elecinsight Part #
                        700-535-K6T4008U1C-GF10
                        		Samsung Semiconductor
                        Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
                        Datasheet Compare
                          Min.:1
                          Mult.:1
                          		 YES 32 100 ns - SAMSUNG SEMICONDUCTOR INC - 524288 words 512000 85 °C -40 °C PLASTIC/EPOXY SOP SOP, SOP32,.56 SOP32,.56 RECTANGULAR SMALL OUTLINE Obsolete SOIC No 3 V e0 - 3A991.B.2.A TIN LEAD - 8542.32.00.41 DUAL GULL WING - 1 1.27 mm compliant 32 R-PDSO-G32 Not Qualified 3.3 V INDUSTRIAL 2.7 V - ASYNCHRONOUS 0.03 mA 512KX8 3-STATE 3 mm 8 - 4194304 bit PARALLEL COMMON STANDARD SRAM 2 V - - - - - - 20.47 mm 11.43 mm
                          K6T4008U1C-GF10
                          K6T4008U1C-GF10

                          700-535-K6T4008U1C-GF10 Samsung Semiconductor
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                          Samsung Semiconductor KM44V16100BS-6
                          Mfr. Part #
                          KM44V16100BS-6
                          Elecinsight Part #
                          700-535-KM44V16100BS-6
                          		Samsung Semiconductor
                          Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
                          Datasheet Compare
                            Min.:1
                            Mult.:1
                            		 YES 32 60 ns - SAMSUNG SEMICONDUCTOR INC - 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 0.400 INCH, PLASTIC, TSOP2-32 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3.3 V e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 1.27 mm unknown 32 R-PDSO-G32 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.11 mA 16MX4 3-STATE 1.2 mm 4 0.0005 A 67108864 bit - COMMON FAST PAGE DRAM - 4096 - - FAST PAGE - NO 20.95 mm 10.16 mm
                            KM44V16100BS-6
                            KM44V16100BS-6

                            700-535-KM44V16100BS-6 Samsung Semiconductor
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                            Samsung Semiconductor K4D55323QF-VC2A
                            Mfr. Part #
                            K4D55323QF-VC2A
                            Elecinsight Part #
                            700-535-K4D55323QF-VC2A
                            		Samsung Semiconductor
                            DDR DRAM, 8MX32, 0.55ns, CMOS, PBGA144
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 YES 144 0.55 ns 350 MHz SAMSUNG SEMICONDUCTOR INC 3 8388608 words 8000000 65 °C - PLASTIC/EPOXY FBGA FBGA, BGA144,12X12,32 BGA144,12X12,32 SQUARE GRID ARRAY, FINE PITCH Obsolete - Yes 1.8 V - - EAR99 - - 8542.32.00.24 BOTTOM BALL 260 - 0.8 mm compliant - S-PBGA-B144 Not Qualified - COMMERCIAL - - - - 8MX32 3-STATE - 32 - 268435456 bit - COMMON GDDR1 DRAM - 4096 4 - - - - - -
                              K4D55323QF-VC2A
                              K4D55323QF-VC2A

                              700-535-K4D55323QF-VC2A Samsung Semiconductor
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                              Samsung Semiconductor K6F8008U2M-TF70
                              Mfr. Part #
                              K6F8008U2M-TF70
                              Elecinsight Part #
                              700-535-K6F8008U2M-TF70
                              		Samsung Semiconductor
                              Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 YES 44 70 ns - SAMSUNG SEMICONDUCTOR INC - 1048576 words 1000000 85 °C -40 °C PLASTIC/EPOXY TSOP2 TSOP2, TSOP44,.46,32 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No 3 V e0 - 3A991.B.2.A TIN LEAD - 8542.32.00.41 DUAL GULL WING - 1 0.8 mm compliant 44 R-PDSO-G44 Not Qualified 3.3 V INDUSTRIAL 2.7 V - ASYNCHRONOUS 0.035 mA 1MX8 3-STATE 1.2 mm 8 0.000006 A 8388608 bit PARALLEL COMMON STANDARD SRAM 1.5 V - - - - - - 18.41 mm 10.16 mm
                                K6F8008U2M-TF70
                                K6F8008U2M-TF70

                                700-535-K6F8008U2M-TF70 Samsung Semiconductor
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                                Samsung Semiconductor K4S64323LH-FF1L
                                Mfr. Part #
                                K4S64323LH-FF1L
                                Elecinsight Part #
                                700-535-K4S64323LH-FF1L
                                		Samsung Semiconductor
                                Synchronous DRAM, 2MX32, 7ns, CMOS, PBGA90
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 YES 90 7 ns 105 MHz SAMSUNG SEMICONDUCTOR INC - 2097152 words 2000000 70 °C -25 °C PLASTIC/EPOXY FBGA - BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Active - No - e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.02 BOTTOM BALL - - 0.8 mm compliant - R-PBGA-B90 Not Qualified - OTHER - - - 0.1 mA 2MX32 3-STATE - 32 0.0005 A 67108864 bit - COMMON SYNCHRONOUS DRAM - 4096 1,2,4,8,FP 1,2,4,8 - - - - -
                                  K4S64323LH-FF1L
                                  K4S64323LH-FF1L

                                  700-535-K4S64323LH-FF1L Samsung Semiconductor
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                                  1 : -
                                  Samsung Semiconductor K6X4008T1F-UB70
                                  Mfr. Part #
                                  K6X4008T1F-UB70
                                  Elecinsight Part #
                                  700-535-K6X4008T1F-UB70
                                  		Samsung Semiconductor
                                  Description: Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 YES 32 70 ns - SAMSUNG SEMICONDUCTOR INC 1 524288 words 512000 70 °C - PLASTIC/EPOXY TSOP TSOP, TSOP32,.46 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - Yes - e3 Yes 3A991.B.2.A MATTE TIN - 8542.32.00.41 DUAL GULL WING - - 1.27 mm compliant - R-PDSO-G32 Not Qualified - COMMERCIAL - - ASYNCHRONOUS 0.025 mA 512KX8 3-STATE - 8 0.00001 A 4194304 bit PARALLEL COMMON STANDARD SRAM 2 V - - - - - - - -
                                    K6X4008T1F-UB70
                                    K6X4008T1F-UB70

                                    700-535-K6X4008T1F-UB70 Samsung Semiconductor
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                                    Elite Memory Technology M11B416256A-25J
                                    Mfr. Part #
                                    M11B416256A-25J
                                    Elecinsight Part #
                                    700-535-M11B416256A-25J
                                    		Elite Memory Technology
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                                      M11B416256A-25J
                                      M11B416256A-25J

                                      700-535-M11B416256A-25J Elite Memory Technology
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                                      Samsung Electronics Co. Ltd M393A4K40EB3-CWE
                                      Mfr. Part #
                                      M393A4K40EB3-CWE
                                      Elecinsight Part #
                                      700-535-M393A4K40EB3-CWE
                                      IN STOCK: 10000
                                      		Samsung Electronics Co. Ltd
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                                        M393A4K40EB3-CWE
                                        M393A4K40EB3-CWE

                                        700-535-M393A4K40EB3-CWE Samsung Electronics Co. Ltd
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                                        In Stock : 10000
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                                        Samsung Semiconductor K6T0808V1D-RF70
                                        Mfr. Part #
                                        K6T0808V1D-RF70
                                        Elecinsight Part #
                                        700-535-K6T0808V1D-RF70
                                        		Samsung Semiconductor
                                        Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, REVERSE, TSOP1-28
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 YES 28 70 ns - SAMSUNG SEMICONDUCTOR INC - 32768 words 32000 85 °C -40 °C PLASTIC/EPOXY TSOP1-R TSOP1-R, TSSOP28,.53,22 TSSOP28,.53,22 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP No 3.3 V e0 - EAR99 TIN LEAD - 8542.32.00.41 DUAL GULL WING - 1 0.55 mm compliant 28 R-PDSO-G28 Not Qualified 3.6 V INDUSTRIAL 3 V - ASYNCHRONOUS 0.035 mA 32KX8 3-STATE 1.2 mm 8 - 262144 bit PARALLEL COMMON STANDARD SRAM 2 V - - - - YES - 11.8 mm 8 mm
                                          K6T0808V1D-RF70
                                          K6T0808V1D-RF70

                                          700-535-K6T0808V1D-RF70 Samsung Semiconductor
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                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4FBE3D4HM-GFCL03V,KM684002BT-12,K4D553238E-JC36,K6E1004C1B-JC20,KM416V1004BJ-6.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.