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Image Part # Manufacturer Description Pricing Quantity RoHS Contact plating Surface Mount Number of pins Number of Terminals Access Time-Max Clock Frequency-Max (fCLK) Connector Connector pinout layout Contacts pitch Electrical mounting Gross weight Ihs Manufacturer Kind of connector Moisture Sensitivity Levels Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Description Package Equivalence Code Package Shape Package Style Part Life Cycle Code Part Package Code Rohs Code Spatial orientation Supply Voltage-Nom (Vsup) Type of connector Operating temperature JESD-609 Code Pbfree Code ECCN Code Terminal Finish Additional Feature HTS Code Terminal Position Terminal Form Peak Reflow Temperature (Cel) Number of Functions Terminal Pitch Reach Compliance Code Current rating Time@Peak Reflow Temperature-Max (s) Pin Count JESD-30 Code Qualification Status Supply Voltage-Max (Vsup) Temperature Grade Supply Voltage-Min (Vsup) Number of Ports Operating Mode Supply Current-Max Organization Output Characteristics Seated Height-Max Memory Width Standby Current-Max Memory Density Parallel/Serial I/O Type Memory IC Type Serial Bus Type Endurance Data Retention Time-Min Write Protection Standby Voltage-Min Rated voltage Refresh Cycles I2C Control Byte Sequential Burst Length Interleaved Burst Length Access Mode Profile Reverse Pinout Self Refresh Length Width Plating thickness Flammability rating
Samsung Semiconductor K4M56163PG-BF75
Mfr. Part #
K4M56163PG-BF75
Elecinsight Part #
700-535-K4M56163PG-BF75
Samsung Semiconductor
Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PBGA54
Datasheet Compare
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    Mult.:1
    		 - YES - 54 6 ns 133 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 1 16777216 words 16000000 70 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA54,9X9,32 BGA54,9X9,32 SQUARE GRID ARRAY, FINE PITCH Obsolete - Yes - 1.8 V - - e3 Yes EAR99 MATTE TIN - 8542.32.00.24 BOTTOM BALL - - 0.8 mm compliant - - - S-PBGA-B54 Not Qualified - OTHER - - - 0.075 mA 16MX16 3-STATE - 16 0.00001 A 268435456 bit - COMMON SYNCHRONOUS DRAM - - - - - - 8192 - 1,2,4,8,FP 1,2,4,8 - - - - - - - -
    K4M56163PG-BF75
    K4M56163PG-BF75

    700-535-K4M56163PG-BF75 Samsung Semiconductor
    RoHS :
    Package : -
    In Stock : -
    1 : -
    Samsung Semiconductor KM416C1200BT-L6
    Mfr. Part #
    KM416C1200BT-L6
    Elecinsight Part #
    700-535-KM416C1200BT-L6
    IN STOCK: 20000
    		Samsung Semiconductor
    Description: Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
    Datasheet Compare
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      Mult.:1
      		 - YES - 44 60 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 1048576 words 1000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44/50,.46,32 TSOP44/50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No - 5 V - - e0 No EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 8542.32.00.02 DUAL GULL WING - 1 0.8 mm unknown - - 50 R-PDSO-G44 Not Qualified 5.5 V COMMERCIAL 4.5 V 1 ASYNCHRONOUS 0.15 mA 1MX16 3-STATE 1.2 mm 16 0.0002 A 16777216 bit - COMMON FAST PAGE DRAM - - - - - - 1024 - - - FAST PAGE - - YES 20.95 mm 10.16 mm - -
      KM416C1200BT-L6
      KM416C1200BT-L6

      700-535-KM416C1200BT-L6 Samsung Semiconductor
      RoHS :
      Package : -
      In Stock : 20000
      1 : -
      Samsung Semiconductor K6T4008U1C-MB10
      Mfr. Part #
      K6T4008U1C-MB10
      Elecinsight Part #
      700-535-K6T4008U1C-MB10
      		Samsung Semiconductor
      Description: Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
      Datasheet Compare
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        Mult.:1
        		 - YES - 32 100 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 524288 words 512000 70 °C - PLASTIC/EPOXY TSOP2-R TSOP2-R, TSOP32,.46 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No - 3 V - - e0 - 3A991.B.2.A TIN LEAD - 8542.32.00.41 DUAL GULL WING - 1 1.27 mm compliant - - 32 R-PDSO-G32 Not Qualified 3.3 V COMMERCIAL 2.7 V - ASYNCHRONOUS 0.03 mA 512KX8 3-STATE 1.2 mm 8 - 4194304 bit PARALLEL COMMON STANDARD SRAM - - - - 2 V - - - - - - - YES - 20.95 mm 10.16 mm - -
        K6T4008U1C-MB10
        K6T4008U1C-MB10

        700-535-K6T4008U1C-MB10 Samsung Semiconductor
        RoHS :
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        Samsung Semiconductor K4B1G0446E-HCF8
        Mfr. Part #
        K4B1G0446E-HCF8
        Elecinsight Part #
        700-535-K4B1G0446E-HCF8
        		Samsung Semiconductor
        DDR DRAM, 256MX4, 0.15ns, CMOS, PBGA78,
        Datasheet Compare
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          Mult.:1
          		 - YES - 78 0.15 ns 533 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 3 268435456 words 256000000 - - PLASTIC/EPOXY FBGA - BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - Yes - 1.5 V - - e1 Yes EAR99 TIN SILVER COPPER - 8542.32.00.32 BOTTOM BALL 260 - 0.8 mm unknown - - - R-PBGA-B78 Not Qualified - - - - - 0.18 mA 256MX4 3-STATE - 4 - 1073741824 bit - COMMON DDR3 DRAM - - - - - - 8192 - 4,8 4,8 - - - - - - - -
          K4B1G0446E-HCF8
          K4B1G0446E-HCF8

          700-535-K4B1G0446E-HCF8 Samsung Semiconductor
          RoHS :
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          Samsung Semiconductor KM416V1000BT-L6
          Mfr. Part #
          KM416V1000BT-L6
          Elecinsight Part #
          700-535-KM416V1000BT-L6
          		Samsung Semiconductor
          Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
          Datasheet Compare
            Min.:1
            Mult.:1
            		 - YES - 44 60 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 1048576 words 1000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44/50,.46,32 TSOP44/50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No - 3.3 V - - e0 No EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 8542.32.00.02 DUAL GULL WING - 1 0.8 mm unknown - - 50 R-PDSO-G44 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.1 mA 1MX16 3-STATE 1.2 mm 16 0.0002 A 16777216 bit - COMMON FAST PAGE DRAM - - - - - - 4096 - - - FAST PAGE - - YES 20.95 mm 10.16 mm - -
            KM416V1000BT-L6
            KM416V1000BT-L6

            700-535-KM416V1000BT-L6 Samsung Semiconductor
            RoHS :
            Package : -
            In Stock : -
            1 : -
            Samsung Semiconductor K4S561632J-UI60
            Mfr. Part #
            K4S561632J-UI60
            Elecinsight Part #
            700-535-K4S561632J-UI60
            IN STOCK: 26981
            		Samsung Semiconductor
            Description: Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54
            Datasheet Compare
              Min.:1
              Mult.:1
              		 - YES - 54 5 ns 166 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 1 16777216 words 16000000 85 °C -40 °C PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - Yes - 3.3 V - - e3 Yes EAR99 MATTE TIN AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING - 1 0.8 mm unknown - - - R-PDSO-G54 Not Qualified 3.6 V INDUSTRIAL 3 V 1 SYNCHRONOUS 0.2 mA 16MX16 3-STATE 1.2 mm 16 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM - - - - - - 8192 - 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST - - YES 22.22 mm 10.16 mm - -
              K4S561632J-UI60
              K4S561632J-UI60

              700-535-K4S561632J-UI60 Samsung Semiconductor
              RoHS :
              Package : -
              In Stock : 26981
              1 : -
              Samsung Semiconductor K4F640412C-TC50
              Mfr. Part #
              K4F640412C-TC50
              Elecinsight Part #
              700-535-K4F640412C-TC50
              		Samsung Semiconductor
              Description: Fast Page DRAM, 16MX4, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
              Datasheet Compare
                Min.:1
                Mult.:1
                		 - YES - 32 50 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP32,.46 TSOP32,.46 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No - 3.3 V - - e0 - EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 8542.32.00.02 DUAL GULL WING - 1 1.27 mm unknown - - 32 R-PDSO-G32 Not Qualified 3.6 V COMMERCIAL 3 V 1 ASYNCHRONOUS 0.11 mA 16MX4 3-STATE 1.2 mm 4 0.0005 A 67108864 bit - COMMON FAST PAGE DRAM - - - - - - 4096 - - - FAST PAGE - - NO 20.95 mm 10.16 mm - -
                K4F640412C-TC50
                K4F640412C-TC50

                700-535-K4F640412C-TC50 Samsung Semiconductor
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                Samsung Electronics Co. Ltd M471A5244CB0-CWED0
                Mfr. Part #
                M471A5244CB0-CWED0
                Elecinsight Part #
                700-535-M471A5244CB0-CWED0
                IN STOCK: 7000
                		Samsung Electronics Co. Ltd
                -
                Datasheet Compare
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                  		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                  M471A5244CB0-CWED0
                  M471A5244CB0-CWED0

                  700-535-M471A5244CB0-CWED0 Samsung Electronics Co. Ltd
                  RoHS :
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                  In Stock : 7000
                  1 : -
                  Samsung Semiconductor K4M56163LG-BL75
                  Mfr. Part #
                  K4M56163LG-BL75
                  Elecinsight Part #
                  700-535-K4M56163LG-BL75
                  		Samsung Semiconductor
                  -
                  Datasheet Compare
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                    		 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
                    K4M56163LG-BL75
                    K4M56163LG-BL75

                    700-535-K4M56163LG-BL75 Samsung Semiconductor
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                    In Stock : -
                    1 : -
                    Samsung Semiconductor K4S56323LF-FR1L
                    Mfr. Part #
                    K4S56323LF-FR1L
                    Elecinsight Part #
                    700-535-K4S56323LF-FR1L
                    		Samsung Semiconductor
                    Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
                    Datasheet Compare
                      Min.:1
                      Mult.:1
                      		 - YES - 90 7 ns 111 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - - 8388608 words 8000000 70 °C -25 °C PLASTIC/EPOXY FBGA - BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Active - No - 2.5 V - - e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.24 BOTTOM BALL - - 0.8 mm compliant - - - R-PBGA-B90 Not Qualified - OTHER - - - 0.15 mA 8MX32 - - 32 0.0005 A 268435456 bit - COMMON SYNCHRONOUS DRAM - - - - - - 4096 - 1,2,4,8,FP 1,2,4,8 - - - - - - - -
                      K4S56323LF-FR1L
                      K4S56323LF-FR1L

                      700-535-K4S56323LF-FR1L Samsung Semiconductor
                      RoHS :
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                      In Stock : -
                      1 : -
                      Samsung Semiconductor KM416C254BLJ-5
                      Mfr. Part #
                      KM416C254BLJ-5
                      Elecinsight Part #
                      700-535-KM416C254BLJ-5
                      		Samsung Semiconductor
                      Description: EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40
                      Datasheet Compare
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                        Mult.:1
                        		 - YES - 40 50 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 262144 words 256000 70 °C - PLASTIC/EPOXY SOJ SOJ, SOJ40,.44 SOJ40,.44 RECTANGULAR SMALL OUTLINE Obsolete SOJ No - 5 V - - e0 No EAR99 TIN LEAD RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 8542.32.00.02 DUAL J BEND - 1 1.27 mm unknown - - 40 R-PDSO-J40 Not Qualified 5.25 V COMMERCIAL 4.75 V 1 ASYNCHRONOUS 0.11 mA 256KX16 3-STATE 3.76 mm 16 0.0002 A 4194304 bit - COMMON EDO DRAM - - - - - - 512 - - - FAST PAGE WITH EDO - - NO 26.04 mm 10.16 mm - -
                        KM416C254BLJ-5
                        KM416C254BLJ-5

                        700-535-KM416C254BLJ-5 Samsung Semiconductor
                        RoHS :
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                        In Stock : -
                        1 : -
                        Samsung Semiconductor K4RAH165VB-BCQK
                        Mfr. Part #
                        K4RAH165VB-BCQK
                        Elecinsight Part #
                        700-535-K4RAH165VB-BCQK
                        IN STOCK: 130
                        		Samsung Semiconductor
                        DDR5 DRAM, 1GX16, CMOS, PBGA106, FBGA-106
                        Datasheet Compare
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                          Mult.:1
                          		 gold-plated YES 28 106 - - socket 1x28 2.54mm THT 1.62 g SAMSUNG SEMICONDUCTOR INC female - 1073741824 words 1000000000 85 °C - PLASTIC/EPOXY BGA FBGA-106 - RECTANGULAR GRID ARRAY Active - - straight 1.1 V pin strips -40...163°C - - - - - - BOTTOM BALL - 1 - unknown 1.5A - - R-PBGA-B106 - - - - - ASYNCHRONOUS - 1GX16 - - 16 - 17179869184 bit - - DDR5 DRAM - - - - - 60V - - - - - beryllium copper - - - - 0.75µm UL94V-0
                          K4RAH165VB-BCQK
                          K4RAH165VB-BCQK

                          700-535-K4RAH165VB-BCQK Samsung Semiconductor
                          RoHS :
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                          In Stock : 130
                          1 : -
                          Samsung K9F1G08U0E-SIB000
                          Mfr. Part #
                          K9F1G08U0E-SIB000
                          Elecinsight Part #
                          700-535-K9F1G08U0E-SIB000
                          		Samsung
                          NAND Flash Memory
                          Datasheet Compare
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                            K9F1G08U0E-SIB000
                            K9F1G08U0E-SIB000

                            700-535-K9F1G08U0E-SIB000 Samsung
                            RoHS :
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                            In Stock : -
                            1 : -
                            Samsung Semiconductor K4S561632N-LL75
                            Mfr. Part #
                            K4S561632N-LL75
                            Elecinsight Part #
                            700-535-K4S561632N-LL75
                            		Samsung Semiconductor
                            Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
                            Datasheet Compare
                              Min.:1
                              Mult.:1
                              		 - YES - 54 5.4 ns 133 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 3 16777216 words 16000000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - Yes - 3.3 V - - e6 Yes EAR99 TIN BISMUTH AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING 260 1 0.8 mm unknown - - - R-PDSO-G54 Not Qualified 3.6 V COMMERCIAL 3 V 1 SYNCHRONOUS 0.05 mA 16MX16 3-STATE 1.2 mm 16 0.002 A 268435456 bit - COMMON SYNCHRONOUS DRAM - - - - - - 8192 - 1,2,4,8,FP 1,2,4,8 FOUR BANK PAGE BURST - - YES 22.22 mm 10.16 mm - -
                              K4S561632N-LL75
                              K4S561632N-LL75

                              700-535-K4S561632N-LL75 Samsung Semiconductor
                              RoHS :
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                              In Stock : -
                              1 : -
                              Samsung Semiconductor S524AD0XF1-RCT0
                              Mfr. Part #
                              S524AD0XF1-RCT0
                              Elecinsight Part #
                              700-535-S524AD0XF1-RCT0
                              		Samsung Semiconductor
                              EEPROM, 32KX8, Serial, CMOS, PDSO8,
                              Datasheet Compare
                                Min.:1
                                Mult.:1
                                		 - YES - 8 - - - - - - - SAMSUNG SEMICONDUCTOR INC - - 32768 words 32000 70 °C -25 °C PLASTIC/EPOXY TSSOP - TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Obsolete - No - - - - e0 No EAR99 TIN LEAD - 8542.32.00.51 DUAL GULL WING 240 - 0.635 mm unknown - - - R-PDSO-G8 Not Qualified - OTHER - - - 0.003 mA 32KX8 - - 8 0.000001 A 262144 bit SERIAL - EEPROM I2C 500000 Write/Erase Cycles 50 HARDWARE - - - 1010DDDR - - - - - - - - - -
                                S524AD0XF1-RCT0
                                S524AD0XF1-RCT0

                                700-535-S524AD0XF1-RCT0 Samsung Semiconductor
                                RoHS :
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                                In Stock : -
                                1 : -
                                Samsung Semiconductor K4S561632C-TE1H
                                Mfr. Part #
                                K4S561632C-TE1H
                                Elecinsight Part #
                                700-535-K4S561632C-TE1H
                                		Samsung Semiconductor
                                Description: Synchronous DRAM, 16MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
                                Datasheet Compare
                                  Min.:1
                                  Mult.:1
                                  		 - YES - 54 6 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 16777216 words 16000000 85 °C -25 °C PLASTIC/EPOXY TSOP2 TSOP2, - RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 - - 3.3 V - - - - EAR99 - AUTO/SELF REFRESH 8542.32.00.24 DUAL GULL WING - 1 0.8 mm unknown - - 54 R-PDSO-G54 Not Qualified 3.6 V OTHER 3 V 1 SYNCHRONOUS - 16MX16 - 1.2 mm 16 - 268435456 bit - - SYNCHRONOUS DRAM - - - - - - - - - - FOUR BANK PAGE BURST - - YES 22.22 mm 10.16 mm - -
                                  K4S561632C-TE1H
                                  K4S561632C-TE1H

                                  700-535-K4S561632C-TE1H Samsung Semiconductor
                                  RoHS :
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                                  In Stock : -
                                  1 : -
                                  Samsung Semiconductor K6T4016U3C-RB85
                                  Mfr. Part #
                                  K6T4016U3C-RB85
                                  Elecinsight Part #
                                  700-535-K6T4016U3C-RB85
                                  		Samsung Semiconductor
                                  Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
                                  Datasheet Compare
                                    Min.:1
                                    Mult.:1
                                    		 - YES - 44 85 ns - - - - - - SAMSUNG SEMICONDUCTOR INC - - 262144 words 256000 70 °C - PLASTIC/EPOXY TSOP2-R TSOP2-R, TSOP44,.46,32 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete TSOP2 No - 3 V - - - No 3A991.B.2.A - - 8542.32.00.41 DUAL GULL WING 240 1 0.8 mm compliant - 30 44 R-PDSO-G44 Not Qualified 3.3 V COMMERCIAL 2.7 V - ASYNCHRONOUS 0.045 mA 256KX16 3-STATE 1.2 mm 16 - 4194304 bit PARALLEL COMMON STANDARD SRAM - - - - 2 V - - - - - - - YES - 18.41 mm 10.16 mm - -
                                    K6T4016U3C-RB85
                                    K6T4016U3C-RB85

                                    700-535-K6T4016U3C-RB85 Samsung Semiconductor
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                                    In Stock : -
                                    1 : -
                                    Samsung Semiconductor K4X51323PC-7GCA
                                    Mfr. Part #
                                    K4X51323PC-7GCA
                                    Elecinsight Part #
                                    700-535-K4X51323PC-7GCA
                                    		Samsung Semiconductor
                                    DDR DRAM, 16MX32, 6ns, CMOS, PBGA90
                                    Datasheet Compare
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                                      Mult.:1
                                      		 - YES - 90 6 ns 111 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 1 16777216 words 16000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA90,9X15,32 BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - Yes - 1.8 V - - e3 Yes EAR99 MATTE TIN - 8542.32.00.28 BOTTOM BALL - - 0.8 mm compliant - - - R-PBGA-B90 Not Qualified - OTHER - - - 0.135 mA 16MX32 3-STATE - 32 0.0003 A 536870912 bit - COMMON DDR1 DRAM - - - - - - 8192 - 2,4,8,16 2,4,8,16 - - - - - - - -
                                      K4X51323PC-7GCA
                                      K4X51323PC-7GCA

                                      700-535-K4X51323PC-7GCA Samsung Semiconductor
                                      RoHS :
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                                      In Stock : -
                                      1 : -
                                      Samsung Semiconductor K4S641632E-TP1H
                                      Mfr. Part #
                                      K4S641632E-TP1H
                                      Elecinsight Part #
                                      700-535-K4S641632E-TP1H
                                      		Samsung Semiconductor
                                      Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54
                                      Datasheet Compare
                                        Min.:1
                                        Mult.:1
                                        		 - YES - 54 6 ns 100 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - 3 4194304 words 4000000 85 °C -40 °C PLASTIC/EPOXY TSOP TSOP, TSOP54,.46,32 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Obsolete - No - 3.3 V - - e0 No EAR99 TIN LEAD - 8542.32.00.02 DUAL GULL WING - - 0.8 mm unknown - - - R-PDSO-G54 Not Qualified - INDUSTRIAL - - - 0.125 mA 4MX16 3-STATE - 16 0.001 A 67108864 bit - COMMON SYNCHRONOUS DRAM - - - - - - 4096 - 1,2,4,8,FP 1,2,4,8 - - - - - - - -
                                        K4S641632E-TP1H
                                        K4S641632E-TP1H

                                        700-535-K4S641632E-TP1H Samsung Semiconductor
                                        RoHS :
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                                        In Stock : -
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                                        Samsung Semiconductor K4S643233H-FE75
                                        Mfr. Part #
                                        K4S643233H-FE75
                                        Elecinsight Part #
                                        700-535-K4S643233H-FE75
                                        		Samsung Semiconductor
                                        Description: Synchronous DRAM, 2MX32, 6ns, CMOS, PBGA90
                                        Datasheet Compare
                                          Min.:1
                                          Mult.:1
                                          		 - YES - 90 6 ns 133 MHz - - - - - SAMSUNG SEMICONDUCTOR INC - - 2097152 words 2000000 85 °C -25 °C PLASTIC/EPOXY FBGA FBGA, BGA90,9X15,32 BGA90,9X15,32 RECTANGULAR GRID ARRAY, FINE PITCH Obsolete - No - - - - e0 - EAR99 Tin/Lead (Sn/Pb) - 8542.32.00.02 BOTTOM BALL - - 0.8 mm unknown - - - R-PBGA-B90 Not Qualified - OTHER - - - 0.135 mA 2MX32 3-STATE - 32 0.0005 A 67108864 bit - COMMON SYNCHRONOUS DRAM - - - - - - 4096 - 1,2,4,8,FP 1,2,4,8 - - - - - - - -
                                          K4S643233H-FE75
                                          K4S643233H-FE75

                                          700-535-K4S643233H-FE75 Samsung Semiconductor
                                          RoHS :
                                          Package : -
                                          In Stock : -
                                          1 : -

                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: K4M56163PG-BF75,KM416C1200BT-L6,K6T4008U1C-MB10,K4B1G0446E-HCF8,KM416V1000BT-L6.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 1151 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.