| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Standby Voltage-Min | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | Mfr. Part #KM41C16000J-6Elecinsight Part #700-535-KM41C16000J-6 | Samsung Semiconductor |
Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, PLASTIC, SOJ-28/24
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 24 | 60 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ24/28,.44 | SOJ24/28,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | - | 1 | 1.27 mm | unknown | 24 | R-PDSO-J24 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.09 mA | 16MX1 | 3-STATE | 3.66 mm | 1 | 0.001 A | 16777216 bit | - | SEPARATE | FAST PAGE DRAM | - | 4096 | - | - | FAST PAGE | - | NO | 18.42 mm | 10.16 mm | ||
| KM41C16000J-6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K6T0808V1D-GD70Elecinsight Part #700-535-K6T0808V1D-GD70 | Samsung Semiconductor |
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 28 | 70 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 32768 words | 32000 | 85 °C | -25 °C | PLASTIC/EPOXY | SOP | SOP, SOP28,.45 | SOP28,.45 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | compliant | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | OTHER | 3 V | - | ASYNCHRONOUS | 0.035 mA | 32KX8 | 3-STATE | 3 mm | 8 | - | 262144 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 18.29 mm | 8.38 mm | ||
| K6T0808V1D-GD70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K6T4016V3C-RB70Elecinsight Part #700-535-K6T4016V3C-RB70 | Samsung Semiconductor |
Description: Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 44 | 70 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | TSOP2-R | TSOP2-R, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | - | - | 3A991.B.2.A | - | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.045 mA | 256KX16 | 3-STATE | 1.2 mm | 16 | - | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | YES | - | 18.41 mm | 10.16 mm | ||
| K6T4016V3C-RB70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4H511638F-LCB30Elecinsight Part #700-535-K4H511638F-LCB30 | Samsung Semiconductor |
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 66 | 0.7 ns | 166 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 33554432 words | 32000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | Yes | 2.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | DUAL | GULL WING | 260 | 1 | 0.65 mm | unknown | 66 | R-PDSO-G66 | Not Qualified | 2.7 V | COMMERCIAL | 2.3 V | 1 | SYNCHRONOUS | 0.38 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 536870912 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| K4H511638F-LCB30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4H510438F-HCCCElecinsight Part #700-535-K4H510438F-HCCC | Samsung Semiconductor |
DDR DRAM, 128MX4, 0.65ns, CMOS, PBGA60,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 60 | 0.65 ns | 200 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 134217728 words | 128000000 | 70 °C | - | PLASTIC/EPOXY | BGA | - | BGA60,9X12,40/32 | RECTANGULAR | GRID ARRAY | Obsolete | - | Yes | 2.6 V | e1 | Yes | EAR99 | TIN SILVER COPPER | - | 8542.32.00.28 | BOTTOM | BALL | 260 | - | 0.8 mm | unknown | - | R-PBGA-B60 | Not Qualified | - | COMMERCIAL | - | - | - | 0.385 mA | 128MX4 | 3-STATE | - | 4 | 0.005 A | 536870912 bit | - | COMMON | DDR1 DRAM | - | 8192 | 2,4,8 | 2,4,8 | - | - | - | - | - | ||
| K4H510438F-HCCC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K6T4008U1C-GF10Elecinsight Part #700-535-K6T4008U1C-GF10 | Samsung Semiconductor |
Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 100 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | - | 3A991.B.2.A | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | compliant | 32 | R-PDSO-G32 | Not Qualified | 3.3 V | INDUSTRIAL | 2.7 V | - | ASYNCHRONOUS | 0.03 mA | 512KX8 | 3-STATE | 3 mm | 8 | - | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 20.47 mm | 11.43 mm | ||
| K6T4008U1C-GF10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4D55323QF-VC2AElecinsight Part #700-535-K4D55323QF-VC2A | Samsung Semiconductor |
DDR DRAM, 8MX32, 0.55ns, CMOS, PBGA144
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 144 | 0.55 ns | 350 MHz | SAMSUNG SEMICONDUCTOR INC | 3 | 8388608 words | 8000000 | 65 °C | - | PLASTIC/EPOXY | FBGA | FBGA, BGA144,12X12,32 | BGA144,12X12,32 | SQUARE | GRID ARRAY, FINE PITCH | Obsolete | - | Yes | 1.8 V | - | - | EAR99 | - | - | 8542.32.00.24 | BOTTOM | BALL | 260 | - | 0.8 mm | compliant | - | S-PBGA-B144 | Not Qualified | - | COMMERCIAL | - | - | - | - | 8MX32 | 3-STATE | - | 32 | - | 268435456 bit | - | COMMON | GDDR1 DRAM | - | 4096 | 4 | - | - | - | - | - | - | ||
| K4D55323QF-VC2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K6F8008U2M-TF70Elecinsight Part #700-535-K6F8008U2M-TF70 | Samsung Semiconductor |
Standard SRAM, 1MX8, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 44 | 70 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP44,.46,32 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3 V | e0 | - | 3A991.B.2.A | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 0.8 mm | compliant | 44 | R-PDSO-G44 | Not Qualified | 3.3 V | INDUSTRIAL | 2.7 V | - | ASYNCHRONOUS | 0.035 mA | 1MX8 | 3-STATE | 1.2 mm | 8 | 0.000006 A | 8388608 bit | PARALLEL | COMMON | STANDARD SRAM | 1.5 V | - | - | - | - | - | - | 18.41 mm | 10.16 mm | ||
| K6F8008U2M-TF70 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4F661612E-TC60Elecinsight Part #700-535-K4F661612E-TC60 | Samsung Semiconductor |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 50 | 60 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 4194304 words | 4000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.11 mA | 4MX16 | 3-STATE | 1.2 mm | 16 | 0.0005 A | 67108864 bit | - | COMMON | FAST PAGE DRAM | - | 8192 | - | - | FAST PAGE | - | NO | 20.95 mm | 10.16 mm | ||
| K4F661612E-TC60 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4FBE3D4HM-GFCL03VElecinsight Part #700-535-K4FBE3D4HM-GFCL03V
IN STOCK: 3971
| Samsung Electronics Co. Ltd |
-
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| K4FBE3D4HM-GFCL03V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K6X1008T2D-GQ85Elecinsight Part #700-535-K6X1008T2D-GQ85 | Samsung Semiconductor |
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 85 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 131072 words | 128000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP32,.56 | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | 32 | R-PDSO-G32 | Not Qualified | 3.6 V | AUTOMOTIVE | 2.7 V | - | ASYNCHRONOUS | 0.02 mA | 128KX8 | 3-STATE | 3 mm | 8 | - | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | 20.47 mm | 11.43 mm | ||
| K6X1008T2D-GQ85 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4B1G0846F-HYH9000Elecinsight Part #700-535-K4B1G0846F-HYH9000 | Samsung Semiconductor |
-
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| K4B1G0846F-HYH9000 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #KM416S1020CT-F10Elecinsight Part #700-535-KM416S1020CT-F10 | Samsung Semiconductor |
Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 50 | 7 ns | 100 MHz | SAMSUNG SEMICONDUCTOR INC | - | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.115 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | - | YES | 20.95 mm | 10.16 mm | ||
| KM416S1020CT-F10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4S56323LF-FC75Elecinsight Part #700-535-K4S56323LF-FC75 | Samsung Semiconductor |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 90 | 6 ns | 133 MHz | SAMSUNG SEMICONDUCTOR INC | - | 8388608 words | 8000000 | 70 °C | -25 °C | PLASTIC/EPOXY | FBGA | - | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Active | - | No | 2.5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.24 | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | R-PBGA-B90 | Not Qualified | - | OTHER | - | - | - | 0.18 mA | 8MX32 | - | - | 32 | 0.0005 A | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | ||
| K4S56323LF-FC75 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #KM48V8004AK-6Elecinsight Part #700-535-KM48V8004AK-6 | Samsung Semiconductor |
Description: EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 60 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | 8542.32.00.02 | DUAL | J BEND | - | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.14 mA | 8MX8 | 3-STATE | 3.76 mm | 8 | 0.0005 A | 67108864 bit | - | COMMON | EDO DRAM | - | 8192 | - | - | FAST PAGE WITH EDO | - | NO | 20.96 mm | 10.16 mm | ||
| KM48V8004AK-6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #KM68V1002BJ-8Elecinsight Part #700-535-KM68V1002BJ-8
IN STOCK: 5400
| Samsung Semiconductor |
Description: Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 8 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 131072 words | 128000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ32,.44 | SOJ32,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOJ | No | 3.3 V | e0 | - | 3A991.B.2.B | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | unknown | 32 | R-PDSO-J32 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.16 mA | 128KX8 | 3-STATE | 3.76 mm | 8 | 0.005 A | 1048576 bit | PARALLEL | COMMON | STANDARD SRAM | 3 V | - | - | - | - | - | - | 20.96 mm | 10.16 mm | ||
| KM68V1002BJ-8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #KM68U4000BLT-7LElecinsight Part #700-535-KM68U4000BLT-7L | Samsung Semiconductor |
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 70 ns | - | SAMSUNG SEMICONDUCTOR INC | 3 | 524288 words | 512000 | 70 °C | - | PLASTIC/EPOXY | TSOP | TSOP, TSOP32,.46 | TSOP32,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | No | 3 V | e0 | No | 3A991.B.2.A | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | - | 1.27 mm | unknown | - | R-PDSO-G32 | Not Qualified | - | COMMERCIAL | - | - | ASYNCHRONOUS | 0.05 mA | 512KX8 | 3-STATE | - | 8 | 0.000015 A | 4194304 bit | PARALLEL | COMMON | STANDARD SRAM | 2 V | - | - | - | - | - | - | - | - | ||
| KM68U4000BLT-7L | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4S641633D-GN96Elecinsight Part #700-535-K4S641633D-GN96
IN STOCK: 1177
| Samsung Semiconductor |
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA52, CSP-52
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 52 | 6 ns | 104 MHz | SAMSUNG SEMICONDUCTOR INC | - | 4194304 words | 4000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | TFBGA, BGA52,6X13,30 | BGA52,6X13,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | No | 3 V | e0 | - | EAR99 | TIN LEAD | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | - | 1 | 0.75 mm | unknown | 52 | R-PBGA-B52 | Not Qualified | 3.3 V | OTHER | 2.7 V | 1 | SYNCHRONOUS | 0.125 mA | 4MX16 | 3-STATE | 1.1 mm | 16 | 0.001 A | 67108864 bit | - | COMMON | SYNCHRONOUS DRAM | - | 4096 | - | - | FOUR BANK PAGE BURST | - | YES | 11 mm | 6.6 mm | ||
| K4S641633D-GN96 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #KM41464AP-15Elecinsight Part #700-535-KM41464AP-15 | Samsung Semiconductor |
Page Mode DRAM, 64KX4, 150ns, MOS, PDIP18
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 18 | 150 ns | - | SAMSUNG SEMICONDUCTOR INC | 3 | 65536 words | 64000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP18,.3 | DIP18,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.02 | DUAL | THROUGH-HOLE | - | - | 2.54 mm | unknown | - | R-PDIP-T18 | Not Qualified | - | COMMERCIAL | - | - | - | 0.065 mA | 64KX4 | 3-STATE | - | 4 | - | 262144 bit | - | COMMON | PAGE MODE DRAM | - | 256 | - | - | - | - | - | - | - | ||
| KM41464AP-15 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #K4E160812D-FL60Elecinsight Part #700-535-K4E160812D-FL60 | Samsung Semiconductor |
Description: EDO DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 28 | 60 ns | - | SAMSUNG SEMICONDUCTOR INC | - | 2097152 words | 2000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP28,.34 | TSOP28,.34 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP | No | 3.3 V | e0 | - | EAR99 | TIN LEAD | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | 28 | R-PDSO-G28 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.1 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.0002 A | 16777216 bit | - | COMMON | EDO DRAM | - | 2048 | - | - | FAST PAGE WITH EDO | - | YES | 18.41 mm | 7.62 mm | ||
| K4E160812D-FL60 |
Index :
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