| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Parallel/Serial | I/O Type | Memory IC Type | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Output Enable | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
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![]() | Mfr. Part #MU9C2480A-70DIElecinsight Part #799-535-MU9C2480A-70DI | Music Semiconductors Inc |
Content Addressable SRAM, 2KX64, 52ns, CMOS, PQCC44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 44 | 52 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 2048 words | 2000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Contact Manufacturer | - | No | 5 V | e0 | No | EAR99 | TIN LEAD | BIT MASKING; LANCAM | 8542.32.00.41 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | - | S-PQCC-J44 | Not Qualified | 5.25 V | INDUSTRIAL | 4.75 V | - | ASYNCHRONOUS | 0.15 mA | 2KX64 | - | - | 64 | 0.007 A | 131072 bit | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C2480A-70DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT93C86WI-GT3Elecinsight Part #799-535-CAT93C86WI-GT3 | Catalyst Semiconductor |
EEPROM,
Datasheet
Compare
| Min.:1 Mult.:1 | - | - | - | - | - | CATALYST SEMICONDUCTOR INC | - | - | - | - | - | - | - | , | - | - | - | Transferred | - | - | - | - | - | EAR99 | - | - | 8542.32.00.51 | - | - | - | - | - | unknown | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| CAT93C86WI-GT3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #MU9C4485L-70TCCElecinsight Part #799-535-MU9C4485L-70TCC | Music Semiconductors Inc |
Content Addressable SRAM, 4KX64, 52ns, CMOS, PQFP80
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 80 | 52 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | QFP | QFP, QFP80,.64SQ | QFP80,.64SQ | SQUARE | FLATPACK | Contact Manufacturer | - | No | 3.3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | LANCAM | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.635 mm | unknown | - | - | S-PQFP-G80 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.265 mA | 4KX64 | - | - | 64 | 0.002 A | 262144 bit | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C4485L-70TCC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24LC08J14Elecinsight Part #799-535-CAT24LC08J14 | Catalyst Semiconductor |
EEPROM, 1KX8, Serial, CMOS, PDSO14, 0.150 INCH, SOIC-14
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 14 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP14,.25 | SOP14,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | 2 WIRE INTERFACE; PAGE WRITE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 14 | R-PDSO-G14 | Not Qualified | 6 V | COMMERCIAL | 3 V | - | SYNCHRONOUS | 0.003 mA | 1KX8 | - | 1.75 mm | 8 | 0.000004 A | 8192 bit | SERIAL | - | EEPROM | I2C | 100000 Write/Erase Cycles | 10 ms | 100 | - | - | - | - | 1010DMMR | - | - | - | - | - | 8.65 mm | 3.9 mm | ||
| CAT24LC08J14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L16161A-7TElecinsight Part #799-535-M12L16161A-7T | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 50 | 6 ns | 143 MHz | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 1048576 words | 1000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 50 | R-PDSO-G50 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.14 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | 2048 | - | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | - | YES | 20.95 mm | 10.16 mm | ||
| M12L16161A-7T 799-535-M12L16161A-7T Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #CAT24WC256JIElecinsight Part #799-535-CAT24WC256JI | Catalyst Semiconductor |
EEPROM, 32KX8, Serial, CMOS, PDSO8,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | - | - | CATALYST SEMICONDUCTOR INC | - | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | - | No | - | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | DUAL | GULL WING | - | - | 1.27 mm | unknown | - | - | R-PDSO-G8 | Not Qualified | - | INDUSTRIAL | - | - | - | 0.003 mA | 32KX8 | - | - | 8 | 0.000001 A | 262144 bit | SERIAL | - | EEPROM | I2C | 100000 Write/Erase Cycles | - | 100 | HARDWARE | - | - | - | 10100DDR | - | - | - | - | - | - | - | ||
| CAT24WC256JI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24FC32KAElecinsight Part #799-535-CAT24FC32KA | Catalyst Semiconductor |
Description: EEPROM, 4KX8, Serial, CMOS, PDSO8, EIAJ, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 4096 words | 4000 | 105 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | - | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 4KX8 | - | 2.03 mm | 8 | 9e-7 A | 32768 bit | SERIAL | - | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE | - | - | - | 1010DDDR | - | - | - | - | - | 5.3 mm | 5.25 mm | ||
| CAT24FC32KA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24C44GVI-TE13Elecinsight Part #799-535-CAT24C44GVI-TE13 | Catalyst Semiconductor |
Description: Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, GREEN, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | 375 ns | - | - | CATALYST SEMICONDUCTOR INC | - | 16 words | 16 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 5 V | e4 | - | EAR99 | NICKEL PALLADIUM GOLD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | SYNCHRONOUS | 0.003 mA | 16X16 | - | 1.75 mm | 16 | 0.00003 A | 256 bit | SERIAL | - | NON-VOLATILE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT24C44GVI-TE13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CXK5864BSP-70LLElecinsight Part #799-535-CXK5864BSP-70LL | Sony Semiconductor |
Description: Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, MO-058AB, DIP-28
Datasheet
Compare
| Min.:1 Mult.:1 | NO | 28 | 70 ns | - | - | SONY CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 4.4 mm | 8 | 0.000015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 2 V | YES | - | - | - | - | - | - | - | 35.1 mm | 7.62 mm | ||
| CXK5864BSP-70LL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #MU9C4480L-90DIElecinsight Part #799-535-MU9C4480L-90DI | Music Semiconductors Inc |
Content Addressable SRAM, 4KX64, 75ns, CMOS, PQCC44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 44 | 75 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Contact Manufacturer | - | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | BIT MASKING; LANCAM | 8542.32.00.41 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | - | S-PQCC-J44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | ASYNCHRONOUS | 0.16 mA | 4KX64 | - | - | 64 | 0.002 A | 262144 bit | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C4480L-90DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #HXB15H4G160AF-11MElecinsight Part #799-535-HXB15H4G160AF-11M | Xi'an UniIC Semiconductors Co Ltd |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 96 | - | - | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | 268435456 words | 256000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.5 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B96 | - | 1.575 V | OTHER | 1.425 V | 1 | SYNCHRONOUS | - | 256MX16 | - | 1.2 mm | 16 | - | 4294967296 bit | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 13.5 mm | 9 mm | ||
| HXB15H4G160AF-11M | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SCB25D1G160AE-5BIElecinsight Part #799-535-SCB25D1G160AE-5BI | Xi'an UniIC Semiconductors Co Ltd |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 66 | 0.7 ns | 200 MHz | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP2, TSSOP66,.46 | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | - | - | 2.5 V | - | - | EAR99 | - | - | 8542.32.00.32 | DUAL | GULL WING | - | 1 | 0.65 mm | unknown | - | - | R-PDSO-G66 | - | 2.7 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.26 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.012 A | 1073741824 bit | - | COMMON | DDR1 DRAM | - | - | - | - | - | 2.3 V | - | 8192 | - | 2,4,8 | 2,4,8 | DUAL BANK PAGE BURST | - | YES | 22.22 mm | 11.76 mm | ||
| SCB25D1G160AE-5BI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M14D5121632A-2.5BIG2AElecinsight Part #799-535-M14D5121632A-2.5BIG2A | Elite Semiconductor Memory Technology Inc |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 84 | 0.4 ns | - | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 33554432 words | 32000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA-84 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B84 | - | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | DDR2 DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 12.5 mm | 8 mm | ||
| M14D5121632A-2.5BIG2A 799-535-M14D5121632A-2.5BIG2A Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #CAT24WC256KI-TE13Elecinsight Part #799-535-CAT24WC256KI-TE13 | Catalyst Semiconductor |
EEPROM, 32KX8, Serial, CMOS, PDSO8, EIAJ, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 0.4 MHz | - | CATALYST SEMICONDUCTOR INC | - | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 32KX8 | - | 2.03 mm | 8 | 0.000001 A | 262144 bit | SERIAL | - | EEPROM | I2C | 100000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | - | - | 10100DDR | - | - | - | - | - | 5.3 mm | 5.25 mm | ||
| CAT24WC256KI-TE13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L2561616A-6BG2SElecinsight Part #799-535-M12L2561616A-6BG2S | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, BGA-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | 2017-08-17 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | VFBGA | BGA-54 | BGA54,6X9,30 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | S-PBGA-B54 | - | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.08 mA | 16MX16 | 3-STATE | 1 mm | 16 | - | 268435456 bit | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | 3 V | - | 8192 | - | 1,2,4,8 | 1,2,4,8 | FOUR BANK PAGE BURST | NO | YES | 8 mm | 8 mm | ||
| M12L2561616A-6BG2S 799-535-M12L2561616A-6BG2S Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #M12L2561616A-6TGElecinsight Part #799-535-M12L2561616A-6TG | Elite Semiconductor Memory Technology Inc |
Description: Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | TSOP2 | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | - | 16MX16 | - | 1.2 mm | 16 | - | 268435456 bit | - | - | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| M12L2561616A-6TG 799-535-M12L2561616A-6TG Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #MU9C5640LF-90TZCElecinsight Part #799-535-MU9C5640LF-90TZC | Music Semiconductors Inc |
Content Addressable SRAM, 256X64, 90ns, CMOS, PQFP32
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 32 | 90 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 256 words | 256 | 70 °C | - | PLASTIC/EPOXY | QFP | QFP, QFP32,.35SQ,32 | QFP32,.35SQ,32 | SQUARE | FLATPACK | Contact Manufacturer | - | Yes | 3.3 V | - | - | EAR99 | - | - | 8542.32.00.41 | QUAD | GULL WING | 260 | - | 0.8 mm | unknown | - | - | S-PQFP-G32 | Not Qualified | - | COMMERCIAL | - | - | - | 0.03 mA | 256X64 | - | - | 64 | 0.002 A | 16384 bit | - | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C5640LF-90TZC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT25C32SAElecinsight Part #799-535-CAT25C32SA | Catalyst Semiconductor |
EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 3 MHz | - | CATALYST SEMICONDUCTOR INC | - | 4096 words | 4000 | 105 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.01 mA | 4KX8 | - | 1.75 mm | 8 | 0.00001 A | 32768 bit | SERIAL | - | EEPROM | SPI | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT25C32SA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #P4C164-35JCElecinsight Part #799-535-P4C164-35JC | Pyramid Semiconductor Corporation |
Description: Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 28 | 35 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ28,.34 | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | Active | SOJ | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | J BEND | - | 1 | 1.27 mm | compliant | - | 28 | R-PDSO-J28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.145 mA | 8KX8 | 3-STATE | 3.7592 mm | 8 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | 18.161 mm | 7.5184 mm | ||
| P4C164-35JC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #P4C164-20PCElecinsight Part #799-535-P4C164-20PC | Pyramid Semiconductor Corporation |
Description: Standard SRAM, 8KX8, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28
Datasheet
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| Min.:1 Mult.:1 | NO | 28 | 20 ns | - | - | PYRAMID SEMICONDUCTOR CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Active | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | compliant | - | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.155 mA | 8KX8 | 3-STATE | 5.334 mm | 8 | 0.015 A | 65536 bit | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | 4.5 V | - | - | - | - | - | - | - | - | 34.8615 mm | 7.62 mm | ||
| P4C164-20PC |
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