| Image | Part # | Manufacturer | Description | Pricing | Quantity | RoHS | Surface Mount | Number of Terminals | Access Time-Max | Clock Frequency-Max (fCLK) | Date Of Intro | Ihs Manufacturer | Moisture Sensitivity Levels | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Rohs Code | Supply Voltage-Nom (Vsup) | JESD-609 Code | Pbfree Code | ECCN Code | Terminal Finish | Additional Feature | HTS Code | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Qualification Status | Supply Voltage-Max (Vsup) | Temperature Grade | Supply Voltage-Min (Vsup) | Number of Ports | Operating Mode | Supply Current-Max | Organization | Output Characteristics | Seated Height-Max | Memory Width | Standby Current-Max | Memory Density | Screening Level | Parallel/Serial | I/O Type | Memory IC Type | Programming Voltage | Serial Bus Type | Endurance | Write Cycle Time-Max (tWC) | Data Retention Time-Min | Write Protection | Standby Voltage-Min | Data Polling | Toggle Bit | Command User Interface | Output Enable | Page Size | Refresh Cycles | I2C Control Byte | Sequential Burst Length | Interleaved Burst Length | Access Mode | Reverse Pinout | Self Refresh | Length | Width |
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![]() | Mfr. Part #CAT24LC08J14Elecinsight Part #799-535-CAT24LC08J14 | Catalyst Semiconductor |
EEPROM, 1KX8, Serial, CMOS, PDSO14, 0.150 INCH, SOIC-14
Datasheet
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| Min.:1 Mult.:1 | YES | 14 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 1024 words | 1000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP14,.25 | SOP14,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | 2 WIRE INTERFACE; PAGE WRITE | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 14 | R-PDSO-G14 | Not Qualified | 6 V | COMMERCIAL | 3 V | - | SYNCHRONOUS | 0.003 mA | 1KX8 | - | 1.75 mm | 8 | 0.000004 A | 8192 bit | - | SERIAL | - | EEPROM | - | I2C | 100000 Write/Erase Cycles | 10 ms | 100 | - | - | - | - | - | - | - | - | 1010DMMR | - | - | - | - | - | 8.65 mm | 3.9 mm | ||
| CAT24LC08J14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT25C02V-TE13Elecinsight Part #799-535-CAT25C02V-TE13 | Catalyst Semiconductor |
EEPROM, 256X8, Serial, CMOS, PDSO8, LEAD FREE AND HALOGEN FREE, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 5 MHz | - | CATALYST SEMICONDUCTOR INC | - | 256 words | 256 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | Yes | 5 V | e3 | Yes | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 6 V | COMMERCIAL | 2.5 V | - | SYNCHRONOUS | 0.005 mA | 256X8 | - | 1.75 mm | 8 | 0.000001 A | 2048 bit | - | SERIAL | - | EEPROM | - | SPI | 1000000 Write/Erase Cycles | 5 ms | 100 | HARDWARE/SOFTWARE | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT25C02V-TE13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #MU9C8480B-50TBCElecinsight Part #799-535-MU9C8480B-50TBC | Music Semiconductors Inc |
Description: Content Addressable SRAM, 8KX64, 50ns, CMOS, PQFP64, TQFP-64
Datasheet
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| Min.:1 Mult.:1 | YES | 64 | 50 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | QFP | QFP, QFP64,.6SQ,32 | QFP64,.6SQ,32 | SQUARE | FLATPACK | Contact Manufacturer | QFP | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.8 mm | unknown | - | 64 | S-PQFP-G64 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | - | 8KX64 | - | - | 64 | 0.002 A | 524288 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C8480B-50TBC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24C44GVI-TE13Elecinsight Part #799-535-CAT24C44GVI-TE13 | Catalyst Semiconductor |
Description: Non-Volatile SRAM, 16X16, 375ns, CMOS, PDSO8, GREEN, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | 375 ns | - | - | CATALYST SEMICONDUCTOR INC | - | 16 words | 16 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.25 | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 5 V | e4 | - | EAR99 | NICKEL PALLADIUM GOLD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 8 | R-PDSO-G8 | Not Qualified | 5.5 V | INDUSTRIAL | 4.5 V | - | SYNCHRONOUS | 0.003 mA | 16X16 | - | 1.75 mm | 16 | 0.00003 A | 256 bit | - | SERIAL | - | NON-VOLATILE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 4.9 mm | 3.9 mm | ||
| CAT24C44GVI-TE13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CXK5416P-55Elecinsight Part #799-535-CXK5416P-55 | Sony Semiconductor |
Description: Standard SRAM, 4KX8, 55ns, CMOS, PDIP20, DIP-20
Datasheet
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| Min.:1 Mult.:1 | NO | 20 | 55 ns | - | - | SONY CORP | - | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP20,.3 | DIP20,.3 | RECTANGULAR | IN-LINE | Obsolete | - | No | 5 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | - | R-PDIP-T20 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.1 mA | 4KX8 | 3-STATE | 4.1 mm | 8 | - | 32768 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | - | - | - | - | - | - | - | - | - | 26.9 mm | 7.62 mm | ||
| CXK5416P-55 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CXK5864BSP-70LLElecinsight Part #799-535-CXK5864BSP-70LL | Sony Semiconductor |
Description: Standard SRAM, 8KX8, 70ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, MO-058AB, DIP-28
Datasheet
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| Min.:1 Mult.:1 | NO | 28 | 70 ns | - | - | SONY CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP28,.3 | DIP28,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 28 | R-PDIP-T28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 4.4 mm | 8 | 0.000015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | YES | - | - | - | - | - | - | - | - | 35.1 mm | 7.62 mm | ||
| CXK5864BSP-70LL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #MU9C4480L-90DIElecinsight Part #799-535-MU9C4480L-90DI | Music Semiconductors Inc |
Content Addressable SRAM, 4KX64, 75ns, CMOS, PQCC44
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 44 | 75 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 4096 words | 4000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | QCCJ, LDCC44,.7SQ | LDCC44,.7SQ | SQUARE | CHIP CARRIER | Contact Manufacturer | - | No | 3.3 V | e0 | No | EAR99 | TIN LEAD | BIT MASKING; LANCAM | 8542.32.00.41 | QUAD | J BEND | - | 1 | 1.27 mm | unknown | - | - | S-PQCC-J44 | Not Qualified | 3.6 V | INDUSTRIAL | 3 V | - | ASYNCHRONOUS | 0.16 mA | 4KX64 | - | - | 64 | 0.002 A | 262144 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C4480L-90DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L128168A-6TGElecinsight Part #799-535-M12L128168A-6TG | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.16 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| M12L128168A-6TG 799-535-M12L128168A-6TG Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #M12L128168A-7TGElecinsight Part #799-535-M12L128168A-7TG | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 143 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Contact Manufacturer | TSOP2 | Yes | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.02 | DUAL | GULL WING | - | 1 | 0.8 mm | unknown | - | 54 | R-PDSO-G54 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.14 mA | 8MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | - | YES | 22.22 mm | 10.16 mm | ||
| M12L128168A-7TG 799-535-M12L128168A-7TG Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #SCB18T512160AF-25DIElecinsight Part #799-535-SCB18T512160AF-25DI | Xi'an UniIC Semiconductors Co Ltd |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 84 | - | - | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | 33554432 words | 32000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B84 | - | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 12.5 mm | 8 mm | ||
| SCB18T512160AF-25DI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #SCN18T1G160AF-25DElecinsight Part #799-535-SCN18T1G160AF-25D | Xi'an UniIC Semiconductors Co Ltd |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 84 | 0.4 ns | - | - | XIAN UNILC SEMICONDUCTORS CO LTD | - | 67108864 words | 64000000 | 95 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.32 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | R-PBGA-B84 | - | 1.9 V | OTHER | 1.7 V | 1 | SYNCHRONOUS | - | 64MX16 | - | 1.2 mm | 16 | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | MULTI BANK PAGE BURST | - | YES | 12.5 mm | 8 mm | ||
| SCN18T1G160AF-25D | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L128168A-6TElecinsight Part #799-535-M12L128168A-6T | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 8388608 words | 8000000 | 70 °C | - | PLASTIC/EPOXY | TSOP | TSOP, TSOP54,.46,32 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | - | No | 3.3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.02 | DUAL | GULL WING | - | - | 0.8 mm | unknown | - | - | R-PDSO-G54 | Not Qualified | - | COMMERCIAL | - | - | - | 0.21 mA | 8MX16 | 3-STATE | - | 16 | 0.002 A | 134217728 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 4096 | - | 1,2,4,8,FP | 1,2,4,8 | - | - | - | - | - | ||
| M12L128168A-6T 799-535-M12L128168A-6T Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #M11B416256A-25JElecinsight Part #799-535-M11B416256A-25J | Elite Semiconductor Memory Technology Inc |
Description: EDO DRAM, 256KX16, 25ns, CMOS, PDSO40,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 40 | 25 ns | - | - | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 262144 words | 256000 | 70 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ40,.44 | SOJ40,.44 | RECTANGULAR | SMALL OUTLINE | Contact Manufacturer | - | - | 5 V | - | - | EAR99 | - | - | 8542.32.00.02 | DUAL | J BEND | - | - | 1.27 mm | unknown | - | - | R-PDSO-J40 | Not Qualified | - | COMMERCIAL | - | - | - | 0.21 mA | 256KX16 | 3-STATE | - | 16 | 0.002 A | 4194304 bit | - | - | COMMON | EDO DRAM | - | - | - | - | - | - | - | - | - | - | - | - | 512 | - | - | - | - | - | NO | - | - | ||
| M11B416256A-25J 799-535-M11B416256A-25J Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #MU9C4485L-70TCCElecinsight Part #799-535-MU9C4485L-70TCC | Music Semiconductors Inc |
Content Addressable SRAM, 4KX64, 52ns, CMOS, PQFP80
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 80 | 52 ns | - | - | MUSIC SEMICONDUCTORS INC | 3 | 4096 words | 4000 | 70 °C | - | PLASTIC/EPOXY | QFP | QFP, QFP80,.64SQ | QFP80,.64SQ | SQUARE | FLATPACK | Contact Manufacturer | - | No | 3.3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | LANCAM | 8542.32.00.41 | QUAD | GULL WING | - | 1 | 0.635 mm | unknown | - | - | S-PQFP-G80 | Not Qualified | 3.6 V | COMMERCIAL | 3 V | - | ASYNCHRONOUS | 0.265 mA | 4KX64 | - | - | 64 | 0.002 A | 262144 bit | - | PARALLEL | - | CONTENT ADDRESSABLE SRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| MU9C4485L-70TCC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT28C64BW-15Elecinsight Part #799-535-CAT28C64BW-15 | Catalyst Semiconductor |
EEPROM, 8KX8, 150ns, Parallel, CMOS, PDSO28, LEAD FREE AND HALOGEN FREE, SOIC-28
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 28 | 150 ns | - | - | CATALYST SEMICONDUCTOR INC | 1 | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP28,.4 | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | Transferred | SOIC | Yes | 5 V | e3 | - | EAR99 | MATTE TIN | - | 8542.32.00.51 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | - | ASYNCHRONOUS | 0.03 mA | 8KX8 | - | 2.65 mm | 8 | 0.0001 A | 65536 bit | - | PARALLEL | - | EEPROM | 5 V | - | 1000000 Write/Erase Cycles | 5 ms | - | - | - | YES | YES | NO | - | 32 words | - | - | - | - | - | - | - | 17.9 mm | 7.5 mm | ||
| CAT28C64BW-15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #M12L2561616A-6BG2SElecinsight Part #799-535-M12L2561616A-6BG2S | Elite Semiconductor Memory Technology Inc |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, BGA-54
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 54 | 5.4 ns | 166 MHz | 2017-08-17 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | - | 16777216 words | 16000000 | 70 °C | - | PLASTIC/EPOXY | VFBGA | BGA-54 | BGA54,6X9,30 | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | Contact Manufacturer | - | - | 3.3 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | - | S-PBGA-B54 | - | 3.6 V | COMMERCIAL | 3 V | 1 | SYNCHRONOUS | 0.08 mA | 16MX16 | 3-STATE | 1 mm | 16 | - | 268435456 bit | - | - | COMMON | SYNCHRONOUS DRAM | - | - | - | - | - | - | 3 V | - | - | - | - | - | 8192 | - | 1,2,4,8 | 1,2,4,8 | FOUR BANK PAGE BURST | NO | YES | 8 mm | 8 mm | ||
| M12L2561616A-6BG2S 799-535-M12L2561616A-6BG2S Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #M14D5121632A-2.5BIG2AElecinsight Part #799-535-M14D5121632A-2.5BIG2A | Elite Semiconductor Memory Technology Inc |
DDR DRAM,
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 84 | 0.4 ns | - | - | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | - | 33554432 words | 32000000 | 95 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA-84 | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Yes | 1.8 V | - | - | EAR99 | - | AUTO/SELF REFRESH | 8542.32.00.28 | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | unknown | NOT SPECIFIED | - | R-PBGA-B84 | - | 1.9 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | - | 32MX16 | - | 1.2 mm | 16 | - | 536870912 bit | - | - | - | DDR2 DRAM | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | FOUR BANK PAGE BURST | - | YES | 12.5 mm | 8 mm | ||
| M14D5121632A-2.5BIG2A 799-535-M14D5121632A-2.5BIG2A Elite Semiconductor Memory Technology Inc
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![]() | Mfr. Part #CAT24WC256KI-TE13Elecinsight Part #799-535-CAT24WC256KI-TE13 | Catalyst Semiconductor |
EEPROM, 32KX8, Serial, CMOS, PDSO8, EIAJ, SOIC-8
Datasheet
Compare
| Min.:1 Mult.:1 | YES | 8 | - | 0.4 MHz | - | CATALYST SEMICONDUCTOR INC | - | 32768 words | 32000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP, SOP8,.3 | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 3 V | e0 | - | EAR99 | Tin/Lead (Sn/Pb) | - | 8542.32.00.51 | DUAL | GULL WING | 240 | 1 | 1.27 mm | unknown | 30 | 8 | R-PDSO-G8 | Not Qualified | 6 V | INDUSTRIAL | 2.5 V | - | SYNCHRONOUS | 0.003 mA | 32KX8 | - | 2.03 mm | 8 | 0.000001 A | 262144 bit | - | SERIAL | - | EEPROM | - | I2C | 100000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | - | - | - | - | - | - | 10100DDR | - | - | - | - | - | 5.3 mm | 5.25 mm | ||
| CAT24WC256KI-TE13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CXK5864BM-12LLElecinsight Part #799-535-CXK5864BM-12LL | Sony Semiconductor |
Standard SRAM, 8KX8, 120ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28
Datasheet
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| Min.:1 Mult.:1 | YES | 28 | 120 ns | - | - | SONY CORP | - | 8192 words | 8000 | 70 °C | - | PLASTIC/EPOXY | SOP | SOP, SOP28,.5 | SOP28,.5 | RECTANGULAR | SMALL OUTLINE | Obsolete | SOIC | No | 5 V | e0 | No | EAR99 | TIN LEAD | - | 8542.32.00.41 | DUAL | GULL WING | - | 1 | 1.27 mm | unknown | - | 28 | R-PDSO-G28 | Not Qualified | 5.5 V | COMMERCIAL | 4.5 V | 1 | ASYNCHRONOUS | 0.05 mA | 8KX8 | 3-STATE | 2.7 mm | 8 | 0.000015 A | 65536 bit | - | PARALLEL | COMMON | STANDARD SRAM | - | - | - | - | - | - | 2 V | - | - | - | YES | - | - | - | - | - | - | - | - | 18 mm | 8.4 mm | ||
| CXK5864BM-12LL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | Mfr. Part #CAT24WC02P-1.8Elecinsight Part #799-535-CAT24WC02P-1.8 | Catalyst Semiconductor |
EEPROM, 256X8, Serial, CMOS, PDIP8, PLASTIC, DIP-8
Datasheet
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| Min.:1 Mult.:1 | NO | 8 | - | 0.1 MHz | - | CATALYST SEMICONDUCTOR INC | - | 256 words | 256 | 70 °C | - | PLASTIC/EPOXY | DIP | DIP, DIP8,.3 | DIP8,.3 | RECTANGULAR | IN-LINE | Obsolete | DIP | No | 3 V | e0 | - | EAR99 | TIN LEAD | 1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | THROUGH-HOLE | - | 1 | 2.54 mm | unknown | - | 8 | R-PDIP-T8 | Not Qualified | 6 V | COMMERCIAL | 1.8 V | - | SYNCHRONOUS | 0.003 mA | 256X8 | OPEN-DRAIN | 4.57 mm | 8 | 0.000001 A | 2048 bit | AEC-Q100 | SERIAL | - | EEPROM | - | I2C | 1000000 Write/Erase Cycles | 10 ms | 100 | HARDWARE | - | - | - | - | - | - | - | 1010DDDR | - | - | - | - | - | 9.36 mm | 7.62 mm | ||
| CAT24WC02P-1.8 |
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