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Image Part # Manufacturer Description Pricing Quantity RoHS Mounting Type Package / Case Supplier Device Package Base Product Number Brand Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Continuous Collector Current Ic Max Current-Collector (Ic) (Max) Factory Pack QuantityFactory Pack Quantity Manufacturer Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Operating Temperature Mfr Minimum Operating Temperature Moisture Sensitive Mounting Styles Package Package Type Pd - Power Dissipation Product Status RoHS Test Conditions Operating Temperature Packaging Series Subcategory Technology Configuration Input Type Power - Max Product Type Voltage - Collector Emitter Breakdown (Max) Vce(on) (Max) @ Vge, Ic IGBT Type Gate Charge Current - Collector Pulsed (Icm) Td (on/off) @ 25°C Switching Energy Reverse Recovery Time (trr) Product Category
Bourns Inc. BIDW50N65T
Mfr. Part #
BIDW50N65T
Elecinsight Part #
103-372-BIDW50N65T
IN STOCK: 2507
Bourns Inc.
IGBT 650V 50A TRENCH TO-247-3L
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    		 Through Hole TO-247-3 TO-247 BIDW50N Bourns 650 V 1.65 V 100 A 100 A 100 A 600 Bourns 650 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 416 W Active Details 400V, 50A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 416 W IGBT Transistors 650 V 2.2V @ 15V, 50A Trench Field Stop 123 nC 150 A 37ns/125ns 3mJ (on), 1.1mJ (off) 37.5 ns IGBT Transistors
    BIDW50N65T
    BIDW50N65T

    103-372-BIDW50N65T Bourns Inc.
    RoHS :
    Package : -
    In Stock : 2507
    1 : -
    Bourns Inc. BIDW20N60T
    Mfr. Part #
    BIDW20N60T
    Elecinsight Part #
    103-372-BIDW20N60T
    IN STOCK: 3472
    		Bourns Inc.
    IGBT 600V 20A TRENCH TO-247N
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      		 Through Hole TO-247-3 TO-247 BIDW20N Bourns 600 V 1.7 V 40 A 40 A 40 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 192 W Active Details 400V, 20A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 192 W IGBT Transistors 600 V 2.4V @ 15V, 20A Trench Field Stop 52 nC 60 A 19ns/48ns 1mJ (on), 300μJ (off) 33.7 ns IGBT Transistors
      BIDW20N60T
      BIDW20N60T

      103-372-BIDW20N60T Bourns Inc.
      RoHS :
      Package : -
      In Stock : 3472
      1 : -
      Bourns Inc. BIDNW30N60H3
      Mfr. Part #
      BIDNW30N60H3
      Elecinsight Part #
      103-372-BIDNW30N60H3
      IN STOCK: 1118
      		Bourns Inc.
      IGBT 600V 30A TRENCH TO-247N-3L
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        		 Through Hole TO-247-3 TO-247N-3L BIDNW30N Bourns 600 V 1.65 V 60 A 60 A 60 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247N 230 W Active Details 400V, 30A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 230 W IGBT Transistors 600 V 2V @ 15V, 30A Trench Field Stop 76 nC 120 A 30ns/67ns 1.85mJ (on), 450μJ (off) 28 ns IGBT Transistors
        BIDNW30N60H3
        BIDNW30N60H3

        103-372-BIDNW30N60H3 Bourns Inc.
        RoHS :
        Package : -
        In Stock : 1118
        1 : -
        Bourns Inc. BIDW30N60T
        Mfr. Part #
        BIDW30N60T
        Elecinsight Part #
        103-372-BIDW30N60T
        IN STOCK: 3530
        		Bourns Inc.
        IGBT 600V 30A TRENCH TO-247
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          		 Through Hole TO-247-3 TO-247 BIDW30N Bourns 600 V 1.65 V 60 A 60 A 60 A 600 Bourns 600 V ±20V + 150 C Bourns Inc. - 55 C - Through Hole Tube TO-247 230 W Active Details 400V, 30A, 10Ohm, 15V -55°C ~ 150°C (TJ) Tube - IGBTs Si Single Diode Standard 230 W IGBT Transistors 600 V 1.65V @ 15V, 30A Trench Field Stop 76 nC 90 A 30ns/67ns 1.85mJ (on), 450μJ (off) 40 ns IGBT Transistors
          BIDW30N60T
          BIDW30N60T

          103-372-BIDW30N60T Bourns Inc.
          RoHS :
          Package : -
          In Stock : 3530
          1 : -
          Bourns Inc. BIDD05N60T
          Mfr. Part #
          BIDD05N60T
          Elecinsight Part #
          103-372-BIDD05N60T
          IN STOCK: 10007
          		Bourns Inc.
          IGBT 600V 5A TRENCH TO-252
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            		 Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK) BIDD05N Bourns 600 V 1.5 V 10 A 10 A 10 A 2500 Bourns 600 V ±30V + 150 C Bourns Inc. - 55 C Yes SMD/SMT - TO-252 82 W Active Details 400V, 5A, 10Ohm, 15V -55°C ~ 150°C (TJ) MouseReel - IGBTs Si Single Diode Standard 82 W IGBT Transistors 600 V 2V @ 15V, 5A Trench Field Stop 18.5 nC 15 A 7ns/18ns 200μJ (on), 70μJ (off) 40 ns IGBT Transistors
            BIDD05N60T
            BIDD05N60T

            103-372-BIDD05N60T Bourns Inc.
            RoHS :
            Package : -
            In Stock : 10007
            1 : -

            Discrete Semiconductor Products

            Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: BIDW50N65T,BIDW20N60T,BIDNW30N60H3,BIDW30N60T,BIDD05N60T.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 5 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.