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Image Part # Manufacturer Description Pricing Quantity RoHS Surface Mount Number of Terminals Transistor Element Material Ihs Manufacturer Number of Elements Operating Temperature-Max Package Body Material Package Description Package Shape Package Style Part Life Cycle Code Turn-off Time-Nom (toff) Turn-on Time-Nom (ton) ECCN Code Terminal Position Terminal Form Reach Compliance Code JESD-30 Code Qualification Status Configuration Case Connection Transistor Application Polarity/Channel Type Power Dissipation-Max (Abs) Collector Current-Max (IC) Collector-Emitter Voltage-Max Gate-Emitter Voltage-Max VCEsat-Max
KYOCERA Corporation PDMB600E6
Mfr. Part #
PDMB600E6
Elecinsight Part #
428-372-PDMB600E6
KYOCERA Corporation
Description: Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-7
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    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 600 A 600 V - -
    PDMB600E6
    PDMB600E6

    428-372-PDMB600E6 KYOCERA Corporation
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    KYOCERA Corporation PBMB150E6
    Mfr. Part #
    PBMB150E6
    Elecinsight Part #
    428-372-PBMB150E6
    		KYOCERA Corporation
    Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-12
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      		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 150 A 600 V - -
      PBMB150E6
      PBMB150E6

      428-372-PBMB150E6 KYOCERA Corporation
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      KYOCERA Corporation PDMB75E6
      Mfr. Part #
      PDMB75E6
      Elecinsight Part #
      428-372-PDMB75E6
      		KYOCERA Corporation
      Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-7
      Datasheet Compare
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        		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
        PDMB75E6
        PDMB75E6

        428-372-PDMB75E6 KYOCERA Corporation
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        KYOCERA Corporation PDMB50B12
        Mfr. Part #
        PDMB50B12
        Elecinsight Part #
        428-372-PDMB50B12
        		KYOCERA Corporation
        Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
        Datasheet Compare
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          		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
          PDMB50B12
          PDMB50B12

          428-372-PDMB50B12 KYOCERA Corporation
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          KYOCERA Corporation PDMB200B12C
          Mfr. Part #
          PDMB200B12C
          Elecinsight Part #
          428-372-PDMB200B12C
          		KYOCERA Corporation
          Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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            		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
            PDMB200B12C
            PDMB200B12C

            428-372-PDMB200B12C KYOCERA Corporation
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            KYOCERA Corporation PDMB75B12
            Mfr. Part #
            PDMB75B12
            Elecinsight Part #
            428-372-PDMB75B12
            		KYOCERA Corporation
            Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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              		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
              PDMB75B12
              PDMB75B12

              428-372-PDMB75B12 KYOCERA Corporation
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              KYOCERA Corporation PCHMB75B12
              Mfr. Part #
              PCHMB75B12
              Elecinsight Part #
              428-372-PCHMB75B12
              		KYOCERA Corporation
              Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
              Datasheet Compare
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                		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                PCHMB75B12
                PCHMB75B12

                428-372-PCHMB75B12 KYOCERA Corporation
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                KYOCERA Corporation PHMB600E6C
                Mfr. Part #
                PHMB600E6C
                Elecinsight Part #
                428-372-PHMB600E6C
                		KYOCERA Corporation
                Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4
                Datasheet Compare
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                  		 NO 4 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X4 RECTANGULAR FLANGE MOUNT Active 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 600 A 600 V - -
                  PHMB600E6C
                  PHMB600E6C

                  428-372-PHMB600E6C KYOCERA Corporation
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                  KYOCERA Corporation PDMB200BS12C
                  Mfr. Part #
                  PDMB200BS12C
                  Elecinsight Part #
                  428-372-PDMB200BS12C
                  		KYOCERA Corporation
                  Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                  Datasheet Compare
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                    		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 200 A 1200 V - -
                    PDMB200BS12C
                    PDMB200BS12C

                    428-372-PDMB200BS12C KYOCERA Corporation
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                    KYOCERA Corporation PCHMB50B12
                    Mfr. Part #
                    PCHMB50B12
                    Elecinsight Part #
                    428-372-PCHMB50B12
                    		KYOCERA Corporation
                    Description: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel,
                    Datasheet Compare
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                      		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
                      PCHMB50B12
                      PCHMB50B12

                      428-372-PCHMB50B12 KYOCERA Corporation
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                      KYOCERA Corporation PCHMB75B12A
                      Mfr. Part #
                      PCHMB75B12A
                      Elecinsight Part #
                      428-372-PCHMB75B12A
                      		KYOCERA Corporation
                      Description: Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
                      Datasheet Compare
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                        		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED MODULE-5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 400 W 75 A 1200 V 20 V 2.4 V
                        PCHMB75B12A
                        PCHMB75B12A

                        428-372-PCHMB75B12A KYOCERA Corporation
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                        KYOCERA Corporation PDMB300E6
                        Mfr. Part #
                        PDMB300E6
                        Elecinsight Part #
                        428-372-PDMB300E6
                        		KYOCERA Corporation
                        Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7
                        Datasheet Compare
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                          		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X7 RECTANGULAR FLANGE MOUNT Obsolete 400 ns 300 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 300 A 600 V - -
                          PDMB300E6
                          PDMB300E6

                          428-372-PDMB300E6 KYOCERA Corporation
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                          KYOCERA Corporation PDMB200B12C2
                          Mfr. Part #
                          PDMB200B12C2
                          Elecinsight Part #
                          428-372-PDMB200B12C2
                          		KYOCERA Corporation
                          Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                          Datasheet Compare
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                            		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
                            PDMB200B12C2
                            PDMB200B12C2

                            428-372-PDMB200B12C2 KYOCERA Corporation
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                            KYOCERA Corporation PDMB300B12C
                            Mfr. Part #
                            PDMB300B12C
                            Elecinsight Part #
                            428-372-PDMB300B12C
                            		KYOCERA Corporation
                            Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
                            Datasheet Compare
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                              		 NO 7 SILICON KYOCERA CORP 2 150 °C UNSPECIFIED MODULE-7 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X7 Not Qualified SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 1600 W 300 A 1200 V 20 V 2.4 V
                              PDMB300B12C
                              PDMB300B12C

                              428-372-PDMB300B12C KYOCERA Corporation
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                              KYOCERA Corporation PBMB100E6
                              Mfr. Part #
                              PBMB100E6
                              Elecinsight Part #
                              428-372-PBMB100E6
                              		KYOCERA Corporation
                              Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-12
                              Datasheet Compare
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                                		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 100 A 600 V - -
                                PBMB100E6
                                PBMB100E6

                                428-372-PBMB100E6 KYOCERA Corporation
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                                KYOCERA Corporation PBMB200B12
                                Mfr. Part #
                                PBMB200B12
                                Elecinsight Part #
                                428-372-PBMB200B12
                                		KYOCERA Corporation
                                Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-14
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                                  		 NO 8 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X8 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X8 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 960 W 200 A 1200 V 20 V 2.4 V
                                  PBMB200B12
                                  PBMB200B12

                                  428-372-PBMB200B12 KYOCERA Corporation
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                                  KYOCERA Corporation PRHMB50B12
                                  Mfr. Part #
                                  PRHMB50B12
                                  Elecinsight Part #
                                  428-372-PRHMB50B12
                                  		KYOCERA Corporation
                                  Description: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
                                  Datasheet Compare
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                                    		 NO 5 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X5 RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X5 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED POWER CONTROL N-CHANNEL 250 W 50 A 1200 V 20 V 2.4 V
                                    PRHMB50B12
                                    PRHMB50B12

                                    428-372-PRHMB50B12 KYOCERA Corporation
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                                    KYOCERA Corporation PBMB75E6
                                    Mfr. Part #
                                    PBMB75E6
                                    Elecinsight Part #
                                    428-372-PBMB75E6
                                    		KYOCERA Corporation
                                    Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, MODULE-12
                                    Datasheet Compare
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                                      		 NO 12 SILICON KYOCERA CORP 4 150 °C UNSPECIFIED FLANGE MOUNT, R-XUFM-X12 RECTANGULAR FLANGE MOUNT Active 350 ns 250 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X12 Not Qualified BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE ISOLATED - N-CHANNEL - 75 A 600 V - -
                                      PBMB75E6
                                      PBMB75E6

                                      428-372-PBMB75E6 KYOCERA Corporation
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                                      KYOCERA Corporation PHMB400B12
                                      Mfr. Part #
                                      PHMB400B12
                                      Elecinsight Part #
                                      428-372-PHMB400B12
                                      		KYOCERA Corporation
                                      Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel,
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                                        		 NO 4 SILICON KYOCERA CORP 1 150 °C UNSPECIFIED - RECTANGULAR FLANGE MOUNT Active 800 ns 400 ns EAR99 UPPER UNSPECIFIED unknown R-XUFM-X4 Not Qualified SINGLE WITH BUILT-IN DIODE ISOLATED - N-CHANNEL 1900 W 400 A 1200 V 20 V 2.4 V
                                        PHMB400B12
                                        PHMB400B12

                                        428-372-PHMB400B12 KYOCERA Corporation
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                                        KYOCERA Corporation PHMB1200B12
                                        Mfr. Part #
                                        PHMB1200B12
                                        Elecinsight Part #
                                        428-372-PHMB1200B12
                                        		KYOCERA Corporation
                                        Insulated Gate Bipolar Transistor
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                                          		 - - - KYOCERA CORP - - - , - - Active - - EAR99 - - unknown - - - - - - - - - - -
                                          PHMB1200B12
                                          PHMB1200B12

                                          428-372-PHMB1200B12 KYOCERA Corporation
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                                          Discrete Semiconductor Products

                                          Transistors - IGBTs - Single definition: An IGBT(Insulated-Gate Bipolar Transistor) is a three-terminal power semiconductor device primarily used as an electronic switch. It consist... Transistors - IGBTs - Single Product Listing: PDMB600E6,PBMB150E6,PDMB75E6,PDMB50B12,PDMB200B12C.Discrete Semiconductor Products type:Diodes - Zener - Single(126889),Diodes - Rectifiers - Single(107990),Transistors - FETs, MOSFETs - Single(66871),Transistors - Bipolar (BJT) - Single(41289),Diodes - Bridge Rectifiers(23480) .Transistors - IGBTs - Single has 46 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Elecinsight.